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Trifonov, A., Tong, C. - Y. E., Blundell, R., Ryabchun, S., & Gol'tsman, G. (2015). Probing the stability of HEB mixers with microwave injection. IEEE Trans. Appl. Supercond., 25(3), 2300404 (1 to 4).
Abstract: Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.
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Seliverstov, S., Maslennikov, S., Ryabchun, S., Finkel, M., Klapwijk, T. M., Kaurova, N., et al. (2015). Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer. IEEE Trans. Appl. Supercond., 25(3), 2300304.
Abstract: We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter.
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Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Ozhegov, R. V., Gol’tsman, G. N., Vaks, V. L., et al. (2012). Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers. Tech. Phys., 57(7), 971–974.
Abstract: We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature.
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Tretyakov, I., Svyatodukh, S., Perepelitsa, A., Ryabchun, S., Kaurova, N., Shurakov, A., et al. (2020). Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel), 10(5), 1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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Smirnov, A. V., Baryshev, A. M., de Bernardis, P., Vdovin, V. F., Gol'tsman, G. N., Kardashev, N. S., et al. (2012). The current stage of development of the receiving complex of the millimetron space observatory. Radiophys. Quant. Electron., 54(8), 557–568.
Abstract: We present an overview of the state of the onboard receiving complex of the Millimetron space observatory in the development phase of its preliminary design. The basic parameters of the onboard equipment planned to create and required for astrophysical observations are considered. A review of coherent and incoherent detectors, which are central to each receiver of the observatory, is given. Their characteristics and limiting parameters feasible at the present level of technology are reported.
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Titova, N., Kardakova, A. I., Tovpeko, N., Ryabchun, S., Mandal, S., Morozov, D., et al. (2017). Slow electron–phonon cooling in superconducting diamond films. IEEE Trans. Appl. Supercond., 27(4), 1–4.
Abstract: We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.
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Semenov, A. V., Devyatov, I. A., Ryabchun, S. A., Maslennikov, S. N., Maslennikova, A. S., Larionov, P. A., et al. (2011). Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions. Rus. J. Radio Electron., (10).
Abstract: A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.
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Tretyakov, I., Shurakov, A., Perepelitsa, A., Kaurova, N., Svyatodukh, S., Zilberley, T., et al. (2019). Room temperature silicon detector for IR range coated with Ag2S quantum dots. Phys. Status Solidi RRL, 13(9), 1900187–(1–6).
Abstract: For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
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Kardakova, A., Shishkin, A., Semenov, A., Goltsman, G. N., Ryabchun, S., Klapwijk, T. M., et al. (2016). Relaxation of the resistive superconducting state in boron-doped diamond films. Phys. Rev. B, 93(6), 064506.
Abstract: We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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Tretyakov, I. V., Finkel, M. I., Ryabchun, S. A., Kardakova, A. I., Seliverstov, S. V., Petrenko, D. V., et al. (2014). Hot-electron bolometer mixers with in situ contacts. Radiophys. Quant. Electron., 56(8-9), 591–598.
Abstract: We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer.
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