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Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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Title |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
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Year |
2002 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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15 |
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12 |
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1689-1692 |
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NbN SSPD, SNSPD, QE, jitter, dark counts |
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Abstract |
We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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0953-2048 |
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1533 |
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Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G. |
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NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz |
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Conference Article |
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2002 |
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Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE |
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LETI |
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St.-Petersburg |
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324 |
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Vahtomin, Yuriy B.; Finkel, Matvey I.; Antipov, Sergey V.; Voronov, Boris M.; Smirnov, Konstantin V.; Kaurova, Natalia S.; Drakinski, Vladimir N.; Gol'tsman, Gregogy N. |
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Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si |
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Conference Article |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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259-270 |
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NbN HEB mixers, conversion gain bandwidth |
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We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate. |
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Cambridge, MA, USA |
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Harvard university |
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325 |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz |
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Conference Article |
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2002 |
Publication |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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65-72 |
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waveguide NbN HEB mixers |
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We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation. |
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Cambridge, MA, USA |
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Harvard university |
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326 |
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Blundell, R.; Barrett, J.; H. Gibson, C. Gotteib; Hunter, T.; Kimberk, R.; Leiker, S.; Marrone, D.; Meledin, D.; Paine, S.; Papa, D. C.; Plante, R.; Riddle, P.; Smith, M.; Sridharan, T.; Tong, C. E.; Wilson, R.; Diaz, M.; Bronfman, L.; May, J.; Otarola, A.; Radford, S. J. |
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Prospects for terahertz radio astronomy from Northean Chile |
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Conference Article |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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159-166 |
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Cambridge, MA, USA |
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Harvard university |
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RPLAB @ s @ meledin_2p5_stability |
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327 |
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