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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
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Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
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1987 |
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JETP Lett. |
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JETP Lett. |
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46 |
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6 |
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285-287 |
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YBCO HTS HEB |
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For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
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1706 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state |
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1982 |
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JETP Lett. |
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JETP Lett. |
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36 |
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7 |
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296-299 |
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HEB |
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Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
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1717 |
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Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
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Germanium hot-electron narrow-band detector |
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1971 |
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Sov. Radio Engineering And Electronic Physics |
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Sov. Radio Engineering And Electronic Physics |
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16 |
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8 |
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1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Pentin, Ivan; Finkel, Matvey; Maslennikov, Sergey; Vakhtomin, Yuri; Smirnov, Konstantin; Kaurova, Nataliya; Goltsman, Gregory |
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Superconducting hot-electron-bolometer mixers for the mid-IR |
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2017 |
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Rus. J. Radio Electron. |
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Rus. J. Radio Electron. |
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IR NbN HEB mixers |
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The work presents the result of development of the NbN superconducting hot-electron-bolometer (HEB) mixer. The sensitive element of the mixer is directly coupled to mid-IR radiation, and doesn’t have planar metallic antenna. Investigations of noise characteristics of NbN HEB mixer were performed at the frequency 28.4 THz (λ = 10.6 µm) by using gas-discharge CW CO2-laser without consideration of optical and electrical losses in the heterodyne receiver. The noise temperature of NbN HEB mixer with the size of the sensitive element 10 µm × 10 µm was 2320 K (~ 1.5hν/kB) at the heterodyne frequency of 28.4 THz. The noise temperature was determined by measuring the Y-factor taking into account the term which describes fluctuations of zero-point oscillations in accordance with the fluctuation-dissipation theorem of Calle-Welton. Isothermal method was used to estimate the absorbed heterodyne radiation power which was 9 µW at the optimal operating point for the minimum noise temperature of NbN HEB mixer. |
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Russian |
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1684-1719 |
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http://jre.cplire.ru/jre/oct17/9/abstract.html (Russian) Гетеродинный приемник со сверхпроводниковым смесителем на эффекте электронного разогрева для среднего инфракрасного диапазона |
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1747 |
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Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
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Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
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2020 |
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Sci. Rep. |
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Sci. Rep. |
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10 |
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1 |
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16819 |
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VN HEB |
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The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively. |
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National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia |
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2045-2322 |
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PMID:33033360; PMCID:PMC7546726 |
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1797 |
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