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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
Title | Submillimeter spectroscopy of semiconductors | Type | Journal Article | ||
Year | 1973 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
Volume | 37 | Issue | 2 | Pages | 299-304 |
Keywords | semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons | ||||
Abstract | The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1735 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 14 | Issue | 5 | Pages | 185-186 |
Keywords | Ge, Si, neutral impurity atom, binding energy | ||||
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Call Number | Serial | 1739 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
Title | Transitions of electrons between excited states of donors in germanium | Type | Journal Article | ||
Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 14 | Issue | 2 | Pages | 63-65 |
Keywords | Ge, donors, excited states | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1740 | |||
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Author | Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. | ||||
Title | Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium | Type | Journal Article | ||
Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
Volume | 14 | Issue | 6 | Pages | 241 |
Keywords | Ge, gamma irradiation, defects, impurities | ||||
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Call Number | Serial | 1742 | |||
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Author | Mehdi, I.; Gol'tsman, G.; Putz, P. | ||||
Title | Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) | Type | Miscellaneous | ||
Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
Volume | 5 | Issue | 1 | Pages | 14-15 |
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Abstract | THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented. In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/). You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml Yours sincerely |
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ISSN | 2156-342X | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1353 | |||
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