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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Submillimeter spectroscopy of semiconductors |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
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1973 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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37 |
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2 |
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299-304 |
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Keywords |
semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons |
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The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented. |
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1735 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
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Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
5 |
Pages |
185-186 |
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Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
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Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
Issue |
2 |
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63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
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Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
Issue |
6 |
Pages |
241 |
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Ge, gamma irradiation, defects, impurities |
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no |
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1742 |
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Author |
Mehdi, I.; Gol'tsman, G.; Putz, P. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) |
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2015 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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5 |
Issue |
1 |
Pages |
14-15 |
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THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.
In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).
You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml
Yours sincerely |
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2156-342X |
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1353 |
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Author |
Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
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Title |
A method of optimization of the NbN superconducting single-photon detector |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
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2004 |
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INIS |
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INIS |
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36 |
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27 |
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1-2 |
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NbN SSPD, SNSPD |
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5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION |
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Reference num. 36060124 |
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1485 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. |
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Title |
NbN superconducting single-photon detectors coupled with a communication fiber |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
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2004 |
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INIS |
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INIS |
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37 |
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2 |
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1-2 |
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NbN SSPD, SNSPD |
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Stare Jablonki, Poland |
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8-th Electron Technology Conference ELTE |
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1486 |
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Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. |
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Title |
Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range |
Type ![sorted by Type field, ascending order (up)](img/sort_asc.gif) |
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2004 |
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ResearchGate |
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ResearchGate |
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NbN SSPD, SNSPD |
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We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. |
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Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 |
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