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Semenov, A. D., Hübers, H. - W., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2002). 2.5 THz heterodyne receiver with NbN hot-electron-bolometer mixer. Phys. C: Supercond., 372-376, 448–453.
Abstract: We describe a 2.5 THz heterodyne receiver for applications in astronomy and atmospheric research. The receiver employs a superconducting NbN phonon-cooled hot-electron-bolometer mixer and an optically pumped far-infrared gas laser as local oscillator. 2200 K double sideband mixer noise temperature was measured at 2.5 THz across a 1 GHz intermediate frequency bandwidth centred at 1.5 GHz. The total conversion losses were 17 dB. The mixer response was linear at load temperatures smaller than 400 K. The receiver was tested in the laboratory environment by measuring the methanol line in emission. Observed pressure broadening confirms the true heterodyne detection regime of the mixer.
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Cherednichenko, S., Kroug, M., Merkel, H., Khosropanah, P., Adam, A., Kollberg, E., et al. (2002). 1.6 THz heterodyne receiver for the far infrared space telescope. Phys. C: Supercond., 372-376, 427–431.
Abstract: A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz.
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Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Somani, S., Kasapi, S., Wilsher, K., Lo, W., Sobolewski, R., & Gol’tsman, G. (2001). New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect. J. Vac. Sci. Technol. B, 19(6), 2766–2769.
Abstract: A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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