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Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength |
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1995 |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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Proc. 6th Int. Symp. Space Terahertz Technol. |
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284-293 |
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NbN HEB mixers, detectors |
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We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future. |
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1629 |
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Gol'tsman, G.; Jacobsson, S.; Ekstrom, H.; Karasik, B.; Kollberg, E.; Gershenzon, E. |
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Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation |
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Conference Article |
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1994 |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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209-213a |
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NbN HEB mixers |
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NbN hot-electron mixers combined with slot-line tapered antennas on Si wdnitride membranes had been fabricated. Several strips of 1 gm wide and 5 tan long made from 100 A NbN film are inserted into the slot antenna. IV-curves under local oscillator power in 300-350 GHz frequency range and conversion gain dependencies on intermediate fre- quency in the 0.1-1 GHz range are measured and compared with that for 100 GHz frequency band. Our results show that pumped IV-curves and intermediate frequency bands are different for 100 GHz and 300 GHz frequency ranges. The interpretation exploits the fact that for the lowest radiation frequency the superconducting energy gap is larger than the radiation quantum energy while they are comparable at the higher frequency. Tha results show that such mixers have good perspectives for terahertz receiving technology. |
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1643 |
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0kunev, 0.; Dzardanov, A.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E. |
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NbN hot electron waveguide mixer for 100 GHz operation |
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Conference Article |
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1994 |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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Proc. 5th Int. Symp. Space Terahertz Technol. |
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214-224 |
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waveguide NbN HEB mixers |
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NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K. |
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1644 |
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Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed hot-electron superconducting bolometer |
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1993 |
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Proc. SPIE |
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Proc. SPIE |
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2104 |
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181-182 |
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NbN HEb, Nb, Al |
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Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1652 |
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Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman |
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Title |
Time-resolved characterization of NbN superconducting single-photon optical detectors |
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2017 |
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Proc. SPIE |
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Proc. SPIE |
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10313 |
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103130F (1 to 3) |
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NbN SSPD, SNSPD |
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NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest. |
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SPIE |
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Armitage, J. C. |
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Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada |
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Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! |
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