Yngvesson, K. S., Gerecht, E., Musante, C. F., Zhuang, Y., Ji, M., Goyette, T. M., et al. (1999). Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN. In R. J. Hwu, & K. Wu (Eds.), Proc. SPIE (Vol. 3795, pp. 357–368). SPIE.
Abstract: We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
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Blundell, R., Kawamura, J. H., Tong, C. E., Papa, D. C., Hunter, T. R., Gol’tsman, G. N., et al. (1998). A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range. In Proc. 6-th Int. Conf. Terahertz Electron. (pp. 18–20). IEEE.
Abstract: We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz.
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Gol’tsman, G. N. (1994). Terahertz technology in Russia. In 24th European Microwave Conf. (Vol. 1, pp. 113–121).
Abstract: The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.
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Karasik, B. S., Zorin, M. A., Milostnaya, I. I., Elantev, A. I., Gol’tsman, G. N., & Gershenzon, E. M. (1994). Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films. In R. A. Buhrman, J. T. Clarke, K. Daly, R. H. Koch, J. A. Luine, & R. W. Simon (Eds.), Proc. SPIE (Vol. 2160, pp. 74–82). SPIE.
Abstract: We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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Gol’tsman, G. N., Kouminov, P. B., Goghidze, I. G., Karasik, B. S., & Gershenzon, E. M. (1994). Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states. In M. Nahum, & J. - C. Villegier (Eds.), Proc. SPIE (Vol. 2159, pp. 81–86). SPIE.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
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Gol’tsman, G. N., & Gershenzon, E. M. (1993). High speed hot-electron superconducting bolometer. In J. R. Birch, & T. J. Parker (Eds.), Proc. SPIE (Vol. 2104, pp. 181–182). SPIE.
Abstract: Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
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Gol’tsman, G. N., Semenov, A. D., Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., & Gershenzon, E. M. (1993). Electron-phonon interaction in thin YBaCuO films and fast detectors. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 184–185).
Abstract: The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
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Heusinger, M. A., Nebosis, R. S., Schatz, W., Renk, K. F., Gol’tsman, G. N., Karasik, B. S., et al. (1993). Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 193–195).
Abstract: We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
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Sergeev, A. V., Aksaev, E. E., Gogidze, I. G., Gol’tsman, G. N., Semenov, A. D., & Gershenzon, E. M. (1993). Thermal boundary resistance at YBaCuO film-substrate interface. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 405–406).
Abstract: The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
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Gershenzon, E. M., Gol’tsman, G. N., Sergeev, A., & Semenov, A. D. (1990). Picosecond response of YBaCuO films to electromagnetic radiation. In W. Gorzkowski, M. Gutowski, A. Reich, & H. Szymczak (Eds.), Proc. European Conf. High-Tc Thin Films and Single Crystals (pp. 457–462).
Abstract: Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized.
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