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Author	Ekström, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S.
Title	Phonon cooled ultra thin NbN hot electron bolometer mixers at 620 GHz			Type	Conference Article
Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	29-35
Keywords	NbN HEB mixers
Abstract	We have measured the noise performance and gain bandwidth of 35 A thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. A double-sideband receiver noise temperature less than 1300 K has been obtained with a 3 dB bandwidth of GHz. The gain bandwidth is 3.2 GHz. A lower noise temperature of 1100 K has been achieved with an improved set-up. The mixer output noise dominated by thermal fluctuations is about 50-60 K, and the SSB receiver and intrinsic conversion gain is about -18 and -12 dB, respectively. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1604
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Author	Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Svechnikov, S. I.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.
Title	NbN hot electron bolometric mixer for 2.5 THz: the phonon cooled version			Type	Conference Article
Year	1997	Publication	Proc. 8^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 8^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	258-271
Keywords	NbN HEB mixers
Abstract	We describe an investigation of a NbN HEB mixer for 2.5 THz. NbN HEBs are phonon-cooled de-. vices which are expected, according to theory, to achieve up to 10 GHz IF conversion gain bandwidth. We have developed an antenna coupled device using a log-periodic antenna and a silicon lens. We have demon- strated that sufficient LO power can be coupled to the device in order to bring it to the optimum mixer oper- ating point. The LO power required is less than 1 microwatts as measured directly at the device. We also describe the impedance characteristics of NbN devices and compare them with theory. The experimental results agree with theory except for the imaginary part of the impedance at very low frequencies as was demonstrated by other groups.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1605
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Author	Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S.
Title	Hot electron mixers for THz applications			Type	Conference Article
Year	1996	Publication	Proc. 30th ESLAB	Abbreviated Journal	Proc. 30th ESLAB
Volume		Issue		Pages	207-210
Keywords	NbN HEB mixers
Abstract	We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K.
Address	Noordwijk, Netherlands
Corporate Author				Thesis
Publisher		Place of Publication		Editor	Rolfe, E. J.; Pilbratt, G.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Submillimetre and Far-Infrared Space Instrumentation
Notes				Approved	no
Call Number				Serial	1606
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Author	Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K.
Title	Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies			Type	Conference Article
Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	303-317
Keywords	NbN HEB mixers
Abstract	In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1614
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Author	Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title	9.6 μm wavelength mixing in a patterned YBa₂Cu₃O_7-δ thin film			Type	Conference Article
Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	337-348
Keywords	YBCO HTS HEB mixers
Abstract	Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1615
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Author	Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M.
Title	Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength			Type	Conference Article
Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	584-600
Keywords	NbN HEB mixers
Abstract	We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1616
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Author	Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title	Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity			Type	Conference Article
Year	1996	Publication	Czech. J. Phys.	Abbreviated Journal	Czech. J. Phys.
Volume	46	Issue	S2	Pages	857-858
Keywords	NbC films
Abstract	Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN	0011-4626	ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1617
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Author	Okunev, 0.; Dzardranov, A.; Gol'tsman, G.; Gershenzon, E.
Title	Performances of hot—electron superconducting mixer for frequencies less than the gap energy: NbN mixer for 100 GHz operation			Type	Conference Article
Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	247-253
Keywords	NbN HEB mixers
Abstract	The possibilities to improve the parameters of the 100 GHz NbN HEB superconducting waveguide mixers have been studied. The device consists of a signal strip 1 gm wide by 2 Am long made of 40 A thick NbN film. The best operation point was found at 5 K, where the mixer bandwidth made up 1.5-2 GHz and the total loss diminished down to 8 dB. The critical current density has been increased up to " 40 6 A/cm 2 , the noise temperature of the receiver (DSB) has reduced down to 450 K and the local oscillator power has decreased down to -.4).1 mcV.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1625
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Author	Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.
Title	NbN hot-electron mixer measurements at 200 GHz			Type	Conference Article
Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	254-261
Keywords	NbN HEB mixers
Abstract	We present noise and gain measurements of resistively driven NbN hot-electron mixers near 200 GHz. The device geometry is chosen so that the dominant cooling process of the hot-electrons is their interaction with the lattice. Except for a single batch, the intermediate frequency cut-off of these mixer elements is – 3 700 MHz, and has shown little variation among other batches of devices. At 100 MHz we measured intrinsic mixer losses as low as —3 dB. We measured the noise temperatures at several intermediate frequencies, and for the best de- vice at 137 MHz with 20 MHz bandwidth, we measured 2000 K; using a low-noise first- stage amplifier at 1.5 GHz with 200 MHz bandwidth, the receiver noise temperature measured 2800 K. We estimate that the noise contribution from the mixer is 500 K and the total losses are —15 dB at 137 MHz.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1626
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Author	Ekström, H.; Karasik, B.; Kollberg, E.; Gol'tsman, G.; Gershenzon, E.
Title	350 GHz NbN hot electron bolometer mixer			Type	Conference Article
Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	269-283
Keywords	NbN HEB mixers
Abstract	Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1628
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Author	Gerecht, E.; Musante, C. F.; Schuch, R.; Lutz, C. R.; Jr.; Yngvesson, K. S.; Mueller, E. R.; Waldivian, J.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title	Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength			Type	Conference Article
Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
Volume		Issue		Pages	284-293
Keywords	NbN HEB mixers, detectors
Abstract	We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future.
Address
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference
Notes				Approved	no
Call Number				Serial	1629
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Author	Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A.
Title	Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation			Type	Conference Article
Year	1994	Publication	Council on Low-temp. Phys.	Abbreviated Journal	Council on Low-temp. Phys.
Volume		Issue		Pages	82-83
Keywords	YBCO HTS HEB
Abstract
Address	Dubna
Corporate Author				Thesis
Publisher		Place of Publication		Editor
Language	Russian	Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994
Notes	Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности			Approved	no
Call Number				Serial	1632
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Author	Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title	Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films			Type	Conference Article
Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2160	Issue		Pages	74-82
Keywords	YBCO HTS switches
Abstract	We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO₂ and NdGaO₃ substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	Superconductive Devices and Circuits
Notes				Approved	no
Call Number				Serial	1638
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Author	Karasik, B.S.; Lindgren, M.; Zorin, M.A.; Danerud, M.; Winkler, D.; Trifonov, V.V.; Gol’tsman, G.N.; Gershenzon, E.M.
Title	Picosecond detection and broadband mixing of near-infrared radiation by YBaCuO films			Type	Conference Article
Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2159	Issue		Pages	68-76
Keywords	YBCO HTS HEB mixer
Abstract	Nonequilibrium picosecond and bolometric responses of YBCO films 500 angstroms thick patterned into 20 X 20 micrometers ² size structure to 17 ps laser pulses and modulated radiation of GaAs and CO₂ lasers have been studied. The modulation frequencies up to 10 GHz for GaAs laser and up to 1 GHz for CO₂ were attained. The use of small radiation power (1 – 10 mW/cm² for cw radiation and 10 – 100 nJ/cm² for pulse radiation) in combination with high sensitive read-out system made possible to avoid any non-linear transient processes caused by an overheating of sample above a critical temperature or S-N switching enhanced by an intense radiation. Responses due to the change of kinetic inductance were believed to be negligible. The only signals observed were caused by a small change of the film resistance either in the resistive state created by a bias current or in the normal state. The data obtained by means of pulse and modulation techniques are in agreement. The responsivity about 1 V/W was measured at 1 GHz modulation frequency both for 0.85 micrometers and 10.6 micrometers wavelengths. The sensitivity of high-T_c fast wideband infrared detector is discussed.
Address
Corporate Author				Thesis
Publisher	Spie	Place of Publication		Editor	Nahum, M.; Villegier, J.-C.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	High-Temperature Superconducting Detectors: Bolometric and Nonbolometric
Notes				Approved	no
Call Number				Serial	1640
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Author	Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M.
Title	Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states			Type	Conference Article
Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
Volume	2159	Issue		Pages	81-86
Keywords	YBCO HTS HEB, nonbolornetric
Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
Address
Corporate Author				Thesis
Publisher	SPIE	Place of Publication		Editor	Nahum, M.; Villegier, J.-C.
Language		Summary Language		Original Title
Series Editor		Series Title		Abbreviated Series Title
Series Volume		Series Issue		Edition
ISSN		ISBN		Medium
Area		Expedition		Conference	High-Temperature Superconducting Detectors: Bolometric and Nonbolometric
Notes				Approved	no
Call Number				Serial	1641
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