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Author | Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. | ||||
Title | Relaxation of the resistive superconducting state in boron-doped diamond films | Type | Journal Article | ||
Year | 2016 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
Volume | 93 | Issue | 6 | Pages | 064506 |
Keywords | boron-doped diamond films, resistive superconducting state, relaxation time | ||||
Abstract | We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. | ||||
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ISSN | 2469-9950 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1167 | |||
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Author | Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. | ||||
Title | Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN | Type | Journal Article | ||
Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 31 | Issue | 5 | Pages | 1-5 |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1222 | |||
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Author | Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. | ||||
Title | Thermal properties of NbN single-photon detectors | Type | Journal Article | ||
Year | 2018 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
Volume | 10 | Issue | 6 | Pages | 064063 (1 to 8) |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. | ||||
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ISSN | 2331-7019 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1226 | |||
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Author | Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. | ||||
Title | Performance of THz components based on microstrip PECVD SiNx technology | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
Volume | 7 | Issue | 6 | Pages | 765-771 |
Keywords | transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices | ||||
Abstract | We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. | ||||
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ISSN | 2156-342X | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1294 | |||
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Author | Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. | ||||
Title | Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 1-4 |
Keywords | TiN MKID | ||||
Abstract | We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1296 | |||
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Author | Peltonen, J. T.; Astafiev, O. V.; Korneeva, Y. P.; Voronov, B. M.; Korneev, A. A.; Charaev, I. M.; Semenov, A. V.; Golt'sman, G. N.; Ioffe, L. B.; Klapwijk, T. M.; Tsai, J. S. | ||||
Title | Coherent flux tunneling through NbN nanowires | Type | Journal Article | ||
Year | 2013 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
Volume | 88 | Issue | 22 | Pages | 220506 (1 to 5) |
Keywords | NbN nanowires | ||||
Abstract | We demonstrate evidence of coherent magnetic flux tunneling through superconducting nanowires patterned in a thin highly disordered NbN film. The phenomenon is revealed as a superposition of flux states in a fully metallic superconducting loop with the nanowire acting as an effective tunnel barrier for the magnetic flux, and reproducibly observed in different wires. The flux superposition achieved in the fully metallic NbN rings proves the universality of the phenomenon previously reported for InOx. We perform microwave spectroscopy and study the tunneling amplitude as a function of the wire width, compare the experimental results with theories, and estimate the parameters for existing theoretical models. | ||||
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ISSN | 1098-0121 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1369 | |||
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Author | Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. | ||||
Title | Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate | Type | Journal Article | ||
Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 91 | Issue | 6 | Pages | 062504 (1 to 3) |
Keywords | NbN films, nanofilms | ||||
Abstract | The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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ISSN | 0003-6951 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1425 | |||
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Author | Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. | ||||
Title | Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers | Type | Journal Article | ||
Year | 2006 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
Volume | 100 | Issue | 8 | Pages | 084510 (1 to 7) |
Keywords | NbN HEB mixers | ||||
Abstract | We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. |
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Series Volume | Series Issue | Edition | |||
ISSN | 0021-8979 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1442 | |||
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Author | Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. | ||||
Title | Stability of heterodyne terahertz receivers | Type | Journal Article | ||
Year | 2006 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
Volume | 100 | Issue | 6 | Pages | 064904 (1 to 9) |
Keywords | NbN HEB mixers | ||||
Abstract | In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies. | ||||
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ISSN | 0021-8979 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1444 | |||
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Author | Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. | ||||
Title | Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes | Type | Journal Article | ||
Year | 2015 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
Volume | 15 | Issue | 12 | Pages | 7859-7866 |
Keywords | carbon nanotubes, CNT, tunable superconductivity, van Hove singularities | ||||
Abstract | Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. | ||||
Address | Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States | ||||
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ISSN | 1530-6984 | ISBN | Medium | ||
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Notes | PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 | Approved | no | ||
Call Number | Serial | 1782 | |||
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Author | Baselmans, J.; Kooi, J.; Baryshev, A.; Yang, Z. Q.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. | ||||
Title | Full characterization of small volume NbN HEB mixers for space applications | Type | Conference Article | ||
Year | 2005 | Publication | Proc. 16th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 16th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 457-462 | ||
Keywords | NbN HEB mixers | ||||
Abstract | NbN phonon cooled HEB’s are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by mea- suring the receiver noise temperature at a given IF frequency, usually around 1 – 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer. | ||||
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Publisher | Place of Publication | Göteborg, Sweden | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 363 | |||
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Author | Gao, G. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. | ||||
Title | A novel terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer | Type | Conference Article | ||
Year | 2005 | Publication | Proc. 16th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
Volume | Issue | Pages | 19-23 | ||
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Publisher | Place of Publication | Göteborg, Sweden | Editor | ||
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Notes | Approved | no | |||
Call Number | RPLAB @ s @ qc_lasers_gao_isstt16 | Serial | 367 | ||
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Author | Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. | ||||
Title | Improved NbN phonon cooled hot electron bolometer mixers | Type | Conference Article | ||
Year | 2003 | Publication | Proc. 14th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 14th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 413-423 | ||
Keywords | NbN HEB mixers | ||||
Abstract | NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies. | ||||
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Publisher | Place of Publication | Tucson, USA | Editor | ||
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Notes | Approved | no | |||
Call Number | Serial | 337 | |||
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Author | Jackson, B. D.; Hesper, R.; Adema, J.; Barkhof, J.; Baryshev, A. M.; Zijlstra, T.; Zhu, S.; Klapwijk, T. M. | ||||
Title | Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA | Type | Conference Article | ||
Year | 2009 | Publication | Proc. 20th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
Volume | Issue | Pages | 7-11 | ||
Keywords | SIS mixer, noise temperature, ALMA, band 9 | ||||
Abstract | The Atacama Large Millimeter/Sub-millimeter Array (ALMA) requires the development and production of 73 state-of-the-art receivers for the 602-720 GHz range – the ALMA Band 9 cartridges. Development and pre-production of the first 8 cartridges was completed between 2003 and 2008, resulting in a cartridge design that meets the project's challenging requirements. The cartridge design remains essentially unchanged for production, while the production and test processes developed during pre-production have been fine-tuned to address the biggest new challenge for this phase – ramping up production to a rate of 2 cartridges per month over 2009-2012. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 618 | |||
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Author | Klapwijk, T. M.; Barends, R.; Gao, J. R.; Hajenius, M.; Baselmans, J. J. A. | ||||
Title | Improved superconducting hot-electron bolometer devices for the THz range | Type | Conference Article | ||
Year | 2004 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
Volume | 5498 | Issue | Pages | 129-139 | |
Keywords | HEB mixer distributed model, numerical model | ||||
Abstract | Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature. | ||||
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Notes | Invited talk, Recommended by Klapwijk | Approved | no | ||
Call Number | Serial | 912 | |||
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