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Author Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. url  doi
openurl 
  Title Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder Type (up) Journal Article
  Year 2019 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 12 Issue 5 Pages 054001  
  Keywords epitaxial TiN films  
  Abstract We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1166  
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. url  doi
openurl 
  Title Relaxation of the resistive superconducting state in boron-doped diamond films Type (up) Journal Article
  Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 93 Issue 6 Pages 064506  
  Keywords boron-doped diamond films, resistive superconducting state, relaxation time  
  Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1167  
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Author Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. url  doi
openurl 
  Title Thermal properties of NbN single-photon detectors Type (up) Journal Article
  Year 2018 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 10 Issue 6 Pages 064063 (1 to 8)  
  Keywords NbN SSPD, SNSPD  
  Abstract We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1226  
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Author Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. url  doi
openurl 
  Title Electron energy relaxation in disordered superconducting NbN films Type (up) Journal Article
  Year 2020 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 102 Issue 5 Pages 054501 (1 to 15)  
  Keywords NbN SSPD, SNSPD, HEB, bandwidth, relaxation time  
  Abstract We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1266  
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Author Shcherbatenko, M. L.; Elezov, M. S.; Goltsman, G. N.; Sych, D. V. url  doi
openurl 
  Title Sub-shot-noise-limited fiber-optic quantum receiver Type (up) Journal Article
  Year 2020 Publication Phys. Rev. A Abbreviated Journal Phys. Rev. A  
  Volume 101 Issue 3 Pages 032306 (1 to 5)  
  Keywords SSPD mixer, SNSPD  
  Abstract We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9926 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1268  
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