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Smirnov, K. V., Vachtomin, Y. B., Ozhegov, R. V., Pentin, I. V., Slivinskaya, E. V., Korneev, A. A., et al. (2008). Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography. In P. Tománek, D. Senderáková, & M. Hrabovský (Eds.), Proc. SPIE (Vol. 7138, 713827 (1 to 6)). Spie.
Abstract: At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (TC=10-11 K, jC= 5-7•106 A/cm2); the sensitive area dimensions are 10×10 μm2. The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 μm), >4 % (at 1.55 μm); dark counts rate ≤1 s-1; duration of voltage pulse ≤5 ns; jitter ≤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar.
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Bryerton, E., Percy, R., Bass, R., Schultz, J., Oluleye, O., Lichtenberger, A., et al. (2005). Receiver measurements of pHEB beam lead mixers on 3-μm silicon. In Proc. 30th IRMMW / 13th THz (pp. 271–272).
Abstract: We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
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Sobolewski, R., Zhang, J., Slysz, W., Pearlman, A., Verevkin, A., Lipatov, A., et al. (2003). Ultrafast superconducting single-photon optical detectors. In J. Spigulis, J. Teteris, M. Ozolinsh, & A. Lusis (Eds.), Proc. SPIE (Vol. 5123, pp. 1–11). SPIE.
Abstract: We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Goltsman, G. N., Gershenson, E. M., & Yngvesson, K. S. (1997). Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 55–58).
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Blagosklonskaya, L. E., Gershenzon, E. M., Goltsman, G. N., & Elantev, A. I. (1978). Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1231–1234). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Gershenzon, E. M., Goltsman, G. N., & Orlov, L. (1976). Investigation of population and ionization of donor excited states in Ge. In Physics of Semiconductors (pp. 631–634). North-Holland Publishing Co.
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Averkin, A. S., Shishkin, A. G., Chichkov, V. I., Voronov, B. M., Goltsman, G. N., Karpov, A., et al. (2014). Tunable frequency-selective surface based on superconducting split-ring resonators. In 8th Metamaterials.
Abstract: We study a possibility to use the 2D superconducting metamaterial as a tunable frequency-selective surface (FSS). The proposed FSS is made of sub-wavelength size (l/14) metamaterial unit cells, where a split-ring resonator is embedded in a small iris aperture in a metal plane. The split-ring resonator is made of NbN film, and its resonance frequency is tuned by the temperature of the sample, changing the kinetic inductance of NbN film. The Ansoft HFSS simulation predicts the FSS tuning range of about 10-20 %. The developed superconducting FSS may be used as a tunable band-pass filter or modulator.
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Gershenzon, E. M., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1989). Limiting characteristic of fast superconducting bolometers. Sov. Phys.-Tech. Phys., 34, 195–199.
Abstract: Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов.
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Gershenzon, E. M., Gershenzon, M. E., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1991). Wide-band highspeed Nb and YBaCuO detectors. IEEE Trans. Magn., 27(2), 2836–2839.
Abstract: The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation.
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Gershenzon, E. M., Gershenzon, M. E., Goltsman, G. N., Lulkin, A., Semenov, A. D., & Sergeev, A. V. (1990). Electron-phonon interaction in ultrathin Nb films. Sov. Phys. JETP, 70(3), 505–511.
Abstract: A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms.
1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated.
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