| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
2005 |
Phys. Stat. Sol. (C) |
2 |
1480-1488 |
| Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R. |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
2004 |
J. Modern Opt. |
51 |
1447-1458 |
| Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
Nano-structured superconducting single-photon detectors |
2004 |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
520 |
527-529 |
| Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
2003 |
Microelectronic Engineering |
69 |
274-278 |
| Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
2003 |
Electron. Lett. |
39 |
1086-1088 |
| Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
Fabrication of nanostructured superconducting single-photon detectors |
2003 |
IEEE Trans. Appl. Supercond. |
13 |
192-195 |
| Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
48 |
671-675 |
| Semenov, A. D.; Hübers, H.-W.; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Smirnov, K.; Gol'tsman, G. N.; Voronov, B. M. |
2.5 THz heterodyne receiver with NbN hot-electron-bolometer mixer |
2002 |
Phys. C: Supercond. |
372-376 |
448-453 |
| Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
2002 |
Supercond. Sci. Technol. |
15 |
1689-1692 |
| Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
| Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
Picosecond superconducting single-photon optical detector |
2001 |
Appl. Phys. Lett. |
79 |
705-707 |
| Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
2001 |
Physics of Vibrations |
9 |
242-245 |
| Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
