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Author Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity Type (up) Conference Article
Year 1996 Publication Czech. J. Phys. Abbreviated Journal Czech. J. Phys.
Volume 46 Issue S2 Pages 857-858
Keywords NbC films
Abstract Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
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Series Volume Series Issue Edition
ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1617
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Author Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
Title Population of excited-states of small admixtures in germanium Type (up) Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1154-1159
Keywords Ge, excited states, admixtures
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1723
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Author Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V.
Title Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films Type (up) Conference Article
Year 1996 Publication Czech J. Phys. Abbreviated Journal Czech J. Phys.
Volume 46 Issue S5 Pages 2489-2490
Keywords Al, Be, Nb films
Abstract The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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Language Summary Language Original Title
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ISSN 0011-4626 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1767
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of electron and hole binding into excitons in germanium Type (up) Journal Article
Year 1983 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP
Volume 57 Issue 2 Pages 369-376
Keywords Ge, electron and hole binding
Abstract The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
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Publisher Place of Publication Editor
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Notes Approved no
Call Number Serial 1711
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Author Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
Title Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films Type (up) Journal Article
Year 1995 Publication JETP Abbreviated Journal JETP
Volume 80 Issue 5 Pages 960-964
Keywords
Abstract The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
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Notes Approved no
Call Number RPLAB @ phisix @ Serial 989
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