| Records |
| Author |
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Silicon room temperature IR detectors coated with Ag2S quantum dots |
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Conference Article |
| Year |
2019 |
Publication |
Proc. IWQO |
Abbreviated Journal |
Proc. IWQO |
| Volume |
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Issue |
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Pages |
369-371 |
| Keywords |
silicon detector, quantum dot, IR, surface states |
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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978-5-89513-451-1 |
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1154 |
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Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
| Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
| Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
| Keywords |
Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
| Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
| Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
| Keywords |
Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Prober, D. E. |
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Superconducting terahertz mixer using a transition-edge microbolometer |
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Journal Article |
| Year |
1993 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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62 |
Issue |
17 |
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2119-2121 |
| Keywords |
HEB mixer, NbN, TES |
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Recommended by Klapwijk |
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244 |
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Miller, Aaron J.; Lita, Adriana E.; Calkins, Brice; Vayshenker, Igor; Gruber, Steven M.; Nam, Sae Woo |
| Title |
Compact cryogenic self-aligning fiber-to-detector coupling with losses below one percent |
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Journal Article |
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2011 |
Publication |
Optics Express |
Abbreviated Journal |
Opt. Express |
| Volume |
19 |
Issue |
10 |
Pages |
9102-9110 |
| Keywords |
TES |
| Abstract |
We present a compact packaging technique for coupling light from a single-mode telecommunication fiber to cryogenic single-photon sensitive devices. Our single-photon detectors are superconducting transition-edge sensors (TESs) with a collection area only a factor of a few larger than the area of the fiber core which presents significant challenges to low-loss fiber-to-detector coupling. The coupling method presented here has low loss, cryogenic compatibility, easy and reproducible assembly and low component cost. The system efficiency of the packaged single-photon counting detectors is verified by the “triplet method†of power-source calibration along with the “multiple attenuator†method that produces a calibrated single-photon flux. These calibration techniques, when used in combination with through-wafer imaging and fiber back-reflection measurements, give us confidence that we have achieved coupling losses below 1 % for all devices packaged according to the self-alignment method presented in this paper. |
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RPLAB @ gujma @ |
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666 |
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