Huebers, H. - W., Schubert, J., Semenov, A., Gol’tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1999). NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers. In J. M. Chamberlain (Ed.), Proc. SPIE (Vol. 3828, pp. 410–416). Spie.
Abstract: We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
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Svechnikov, S. I., Finkel, M. I., Maslennikov, S. N., Vachtomin, Y. B., Smirnov, K. V., Seleznev, V. A., et al. (2006). Superconducting hot electron bolometer mixer for middle IR range. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 686–687).
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Anfertev, V., Vaks, V., Revin, L., Pentin, I., Tretyakov, I., Goltsman, G., et al. (2017). High resolution THz gas spectrometer based on semiconductor and superconductor devices. In EPJ Web Conf. (Vol. 132, 02001 (1 to 2)).
Abstract: The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Pentin, I. V., Smirnov, A. V., Ryabchun, S. A., Gol’tsman, G. N., Vaks, V. L., Pripolzin, S. I., et al. (2011). Heterodyne source of THz range based on semiconductor superlattice multiplier. In IRMMW-THz (pp. 1–2).
Abstract: We present the results of our studies of the possibility of developing a heterodyne receiver incorporating a hot-electron bolometer mixer as the detector and a semiconductor superlattice multiplier driven by a reference synthesizer as the local oscillator. We observe that such a local oscillator offers enough power in the terahertz range to pump the HEB into the operating state.
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Zhang, W., Li, N., Jiang, L., Ren, Y., Yao, Q. - J., Lin, Z. - H., et al. (2008). Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement. In C. Zhang, & X. - C. Zhang (Eds.), Proc. SPIE (Vol. 6840, 684007 (1 to 8)). Spie.
Abstract: It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented.
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Ryabchun, S., Tong, C. -yu E., Blundell, R., Kimberk, R., & Gol’tsman, G. (2007). Stabilisation of a terahertz hot-electron bolometer mixer with microwave feedback control. In Proc. 18th Int. Symp. Space Terahertz Technol. (pp. 193–198).
Abstract: We report on implementation of microwave feedback control loop to stabilise the performance of an HEB mixer receiver. It is shown that the receiver sensitivity increases by a factor of 4 over a 16-minute scan, and the corresponding Allan time increases up to 10 seconds, as opposed to an open loop value of 1 second. Our experiments also demonstrate that the receiver sensitivity is limited by the intermediate frequency chain.
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Jiang, L., Miao, W., Zhang, W., Li, N., Lin, Z. H., Yao, Q. J., et al. (2006). Characterization of quasi-optical NbN phonon-cooled superconducting HEB mixers. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 55–58).
Abstract: In this paper, we thoroughly investigate the performance of quasi-optical NbN phonon-cooled superconducting hot-electron bolometer (HEB) mixers, cryogenically cooled by a close-cycled 4-K refrigerator at 500 GI-1z and 850 GHz. The uncorrected lowest receiver noise Abstract---In temperatures measured are 800 K at 500 CHz without anti-reflection coating, and 1000 K @ 850 GHz with a 50 11M thick Mylar anti-reflection coating. The dependence of receiver noise temperature on the critical current and bath temperature of HEB mixer is also investigated here. Lifetime of quasi-optical superconducting NbN HEB mixers of different volumes, room temperature resistances, and critical temperatures are thoroughly studied. Increased room temperature resistance with time over the initial resistance changes between 1 and 1.2, and the reduced critical current with time over the initial value fluctuates slightly around 0.7 for most HEB mixers even of different volumes, room temperature resistances, and critical temperatures. The critical current degrades sharply vvhile room temperature resistance varies over 1.25.
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Gao, J. R., Hiajenius, M., Yang, Z. Q., Klapwijk, T. M., Miao, W., Shi, S. C., et al. (2006). Direct comparison of the sensitivity of a spiral and a twin-slot antenna coupled HEB mixer at 1.6 THz. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 59–62).
Abstract: To make a direct comparison of the sensitivity between a spiral and a twin slot antenna coupled HEB mixer, we designed both types of mixers and fabricated them in a single processing run and on the same wafer. Both mixers have similar dimensions of NbN bridges (1.5-2 pm x0.2 pm). At 1.6 THz we obtained a nearly identical receiver noise temperature from both mixers (only 5% difference), which is in a good agreement with the simulation based on semi analytical models for both antennas. In addition, by using a bandpass filter to reduce the direct detection effect and lowering the bath temperature to 2.4 K, we measured the lowest receiver noise temperature of 700 K at 1.63 THz using the twin-slot antenna mixer.
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Gao, J. R., Hajenius, M., Tichelaar, F. D., Voronov, B., Grishina, E., Klapwijk, T. M., et al. (2006). Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 187–189).
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Gol'tsman, G., Maslennikov, S., Finkel, M., Antipov, S., Kaurova, N., Grishina, E., et al. (2006). Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer. In Proc. MRS (Vol. 935, 210 (1 to 6)).
Abstract: Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.
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