| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers |
1999 |
IEEE Trans. Appl. Supercond. |
47 |
2519-2527 |
| Gol’tsman, G. N.; Gershenzon, E. M. |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
1999 |
Appl. Supercond. |
6 |
649-655 |
| Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
New results for NbN phonon-cooled hot electron bolometric mixers above 1 THz |
1999 |
IEEE Trans. Appl. Supercond. |
9 |
4217-4220 |
| Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer |
1997 |
IEEE Trans. Appl. Supercond. |
7 |
3556-3559 |
| Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
1997 |
Tech. Phys. Lett. |
23 |
486-488 |
| Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
1997 |
IEEE Trans. Appl. Supercond. |
7 |
3572-3575 |
| Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
1997 |
IEEE Trans. Appl. Supercond. |
7 |
3548-3551 |
| Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. |
Fast NbN superconducting switch controlled by optical radiation |
1997 |
IEEE Trans. Appl. Supercond. |
7 |
3734-3737 |
| Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
| Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
