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| Author | Palma, F.; Teppe, F.; Fatimy, A. E.; Green, R.; Xu, J.; Vachontin, Y.; Tredicucci, A.; Goltsman, G.; Knap, W. | ||||
| Title | THz communication system based on a THz quantum cascade laser and a hot electron bolometer | Type  |
Conference Article | ||
| Year | 2010 | Publication | 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves | Abbreviated Journal | 35th Int. Conf. Infrared, Millimeter, and Terahertz Waves |
| Volume | Issue | Pages | 11623798 (1 to 2) | ||
| Keywords | QCL, HEB detector | ||||
| Abstract | We present the experimental study of the direct emission – detection system based on the THz Quantum Cascade Laser as a source and Hot Electron Bolometer (HEB) detector – in view of its application as an optical communication system. We show that the system can efficiently transmit the QCL Terahertz pulses. We estimate the maximal modulation speed of the system to be about several GHz and show that it is limited only by the QCL pulse power supply, detector amplifier and connection line/wires parameters. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1391 | |||
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| Author | Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Gol'tsman, G. N. | ||||
| Title | Infrared and terahertz detectors on basis of superconducting nanostructures | Type |
Conference Article | ||
| Year | 2010 | Publication | Microwave and Telecom. Technol. (CriMiCo), 20th Int. Crimean Conf. | Abbreviated Journal | |
| Volume | Issue | Pages | 823-824 | ||
| Keywords | SSPD, SNSPD, HEB | ||||
| Abstract | Results of development of single-photon receiving systems of visible, infrared and terahertz range based on thin-film superconducting nanostructures are presented. The receiving systems are produced on the basis of superconducting nanostructures, which function by means of hot-electron phenomena. | ||||
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| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | IEEE | ||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ smirnov2010infrared | Serial | 1025 | ||
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| Author | Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Temperature dependence of superconducting hot electron bolometers | Type |
Conference Article | ||
| Year | 2013 | Publication | Not published results: 24th international symposium on space terahertz technology | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | HEB | ||||
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| Address | Groningen,The Netherlands | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1067 | |||
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| Author | Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. | ||||
| Title | Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers | Type |
Conference Article | ||
| Year | 1997 | Publication | Proc. 27th Eur. Microwave Conf. | Abbreviated Journal | |
| Volume | 2 | Issue | Pages | 972-977 | |
| Keywords | HEB mixer, fabrication process | ||||
| Abstract | The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. | ||||
| Address | Jerusalem, Israel | ||||
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| Publisher | IEEE | Place of Publication | Editor | ||
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| Area | Expedition | Conference | 27th Eur. Microwave Conf. | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1075 | |||
| Permanent link to this record | |||||
| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type |
Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
| Permanent link to this record | |||||