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Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman |
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Time-resolved characterization of NbN superconducting single-photon optical detectors |
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Conference Article |
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2017 |
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Proc. SPIE |
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Proc. SPIE |
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10313 |
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103130F (1 to 3) |
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NbN SSPD, SNSPD |
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NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest. |
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SPIE |
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Armitage, J. C. |
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Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada |
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Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! |
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1750 |
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Sáysz, Wojciech; Guziewicz, Marek; Bar, Jan; Wegrzecki, Maciej; Grabiec, Piotr; Grodecki, Remigiusz; Wegrzecka, Iwona; Zwiller, Val; Milosnaya, Irina; Voronov, Boris; Gol’tsman, Gregory; Kitaygorsky, Jen; Sobolewski, Roman |
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Superconducting NbN nanostructures for single photon quantum detectors |
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2008 |
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Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons |
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Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons |
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160 |
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SSPD, SNSPD |
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Practical quantum systems such as quantum communication (QC) or quantum measurement systems require detectors with high speed, high sensitivity, high quantum efficiency (QE), and short deadtimes along with precise timing characteristics and low dark counts. Superconducting single photon detectors (SSPDs) based on ultrathin meander type NbN nanostripes (operated at T=2-5K) are a new and highly promising type of devices fulfilling above requirements. In this paper we present results of the SSPDs nanostructure technological optimization. The base for our detector is thin-film (4nm) NbN layer deposited on 350- P m-thick sapphire substrate The active element of the detector is a meander- nanostructure made of 4-nm-thick and 100-nm-wide NbN stripe, covering 10 u 10 P m 2 area with the filling factor ~0,5. The NbN superconducting films were deposited on sapphire substrates by DC reactive magnetron sputtering whereas the meander element of the detector was patterned by the direct electron-beam lithography followed by reactive-ion etching. To enhance the SSPD efficiency at Ȝ = 1.55 P m, we have performed an approach to increase the absorption of the detector by integrating it with optical resonant cavity. An optical microcavity optimized for absorption of 1.55 P m photons was designed as an one-mirror resonator consisting of a Ȝ/4 dielectric layer and a metallic mirror. The microcavity was deposited on the top of the NbN SSPD meander. The resonator was formed by the dielectric SiO 2 layer and metal mirror made of gold or palladium. Microcavity layers were deposited using a magnetron sputtering system. |
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1409 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory |
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Nanosecond, transient resistive state in two-dimensional superconducting stripes |
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2006 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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H38.13 |
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NbN stripes |
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We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures. |
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Baltimore, MD |
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1454 |
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Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman |
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Ultrafast NBN hot-electron single-photon detectors for electronic applications |
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2002 |
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Abstracts 8-th IUMRS-ICEM |
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Abstracts 8-th IUMRS-ICEM |
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NbN SSPD, SNSPD |
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We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor. |
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8th IUMRS International Conference on Electronic Materials |
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1532 |
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