Yagoubov, P., Gol'tsman, G., Voronov, B., Svechnikov, S., Cherednichenko, S., Gershenzon, E., et al. (1996). Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 303–317).
Abstract: In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
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Gerecht, E., Musante, C. F., Wang, Z., Yngvesson, K. S., Mueller, E. R., Waldman, J., et al. (1996). Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 584–600).
Abstract: We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range.
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Okunev, 0., Dzardranov, A., Gol'tsman, G., & Gershenzon, E. (1995). Performances of hot—electron superconducting mixer for frequencies less than the gap energy: NbN mixer for 100 GHz operation. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 247–253).
Abstract: The possibilities to improve the parameters of the 100 GHz NbN HEB superconducting waveguide mixers have been studied. The device consists of a signal strip 1 gm wide by 2 Am long made of 40 A thick NbN film. The best operation point was found at 5 K, where the mixer bandwidth made up 1.5-2 GHz and the total loss diminished down to 8 dB. The critical current density has been increased up to " 40 6 A/cm 2 , the noise temperature of the receiver (DSB) has reduced down to 450 K and the local oscillator power has decreased down to -.4).1 mcV.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., & Voronov, B. (1995). NbN hot-electron mixer measurements at 200 GHz. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 254–261).
Abstract: We present noise and gain measurements of resistively driven NbN hot-electron mixers near 200 GHz. The device geometry is chosen so that the dominant cooling process of the hot-electrons is their interaction with the lattice. Except for a single batch, the intermediate frequency cut-off of these mixer elements is – 3 700 MHz, and has shown little variation among other batches of devices. At 100 MHz we measured intrinsic mixer losses as low as —3 dB. We measured the noise temperatures at several intermediate frequencies, and for the best de- vice at 137 MHz with 20 MHz bandwidth, we measured 2000 K; using a low-noise first- stage amplifier at 1.5 GHz with 200 MHz bandwidth, the receiver noise temperature measured 2800 K. We estimate that the noise contribution from the mixer is 500 K and the total losses are —15 dB at 137 MHz.
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Ekström, H., Karasik, B., Kollberg, E., Gol'tsman, G., & Gershenzon, E. (1995). 350 GHz NbN hot electron bolometer mixer. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 269–283).
Abstract: Superconducting NbN hot-electron bolometer (HEB) mixer devices have been fabricated and measured at 350 GHz. The HEB is integrated with a double dipole antenna on an extended crystalline quartz hyper hemispherical substrate lens. Heterodyne measurement gave a -3 dB bandwidth, mainly determined by the electron- phonon interaction time, of about 680 and 1000 MHz for two different films with Tc = 8.5 and 11 K respectively. The measured DSB receiver noise temperature is around 3000 K at 800 MHz IF frequency. The main contribution to the output noise from the device is due to electron temperature fluctuations with the equivalent output noise temperature TFL-100 K. TH, has the same frequency dependence as the IF response. The contribution from Johnson noise is of the order of T. The RF coupling loss is estimated to be = 6 dB. The film with lower Tc, had an estimated intrinsic low-frequency conversion loss = 7 dB, while the other film had a conversion loss as high as 14 dB. The difference in intrinsic conversion loss is explained by less uniform absorption of radiation. Measurements of the small signal impedance shows a transition of the output impedance from the DC differential resistance Rd=dV/dI in the low frequency limit to the DC resistance R 0 =Uoff 0 in the bias point for frequencies above 3 GHz. We judge that the optimum shape of the IV-characteristic is more easily obtained at THz frequencies where the main restriction in performance should come from problems with the RF coupling.
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Gerecht, E., Musante, C. F., Schuch, R., Lutz, C. R., Jr., Yngvesson, K. S., et al. (1995). Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 284–293).
Abstract: We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future.
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Gol'tsman, G., Jacobsson, S., Ekstrom, H., Karasik, B., Kollberg, E., & Gershenzon, E. (1994). Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation. In Proc. 5th Int. Symp. Space Terahertz Technol. (pp. 209–213a).
Abstract: NbN hot-electron mixers combined with slot-line tapered antennas on Si wdnitride membranes had been fabricated. Several strips of 1 gm wide and 5 tan long made from 100 A NbN film are inserted into the slot antenna. IV-curves under local oscillator power in 300-350 GHz frequency range and conversion gain dependencies on intermediate fre- quency in the 0.1-1 GHz range are measured and compared with that for 100 GHz frequency band. Our results show that pumped IV-curves and intermediate frequency bands are different for 100 GHz and 300 GHz frequency ranges. The interpretation exploits the fact that for the lowest radiation frequency the superconducting energy gap is larger than the radiation quantum energy while they are comparable at the higher frequency. Tha results show that such mixers have good perspectives for terahertz receiving technology.
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0kunev, 0., Dzardanov, A., Ekstrom, H., Jacobsson, S., Kollberg, E., Gol'tsman, G., et al. (1994). NbN hot electron waveguide mixer for 100 GHz operation. In Proc. 5th Int. Symp. Space Terahertz Technol. (pp. 214–224).
Abstract: NbN is a promising superconducting material used to develope hot- electron superconducting mixers with an IF bandwidth over 1 GHz. In the 100 GHz frequency range, the following parameters were obtained for NbN films 50 A thick: the noise temperature of the receiver (DSB) 1000 K; the conversion losses 10 d13, the IF bandwidth 1 GHz; the local oscillator power 1 /LW. An increase of NbN film thickness up to 80-100 A and increase of working temperature up to 7-8 K, and a better mixer matching may allow to broader the IF band up to 3 Gllz, to reduce the conversion losses down to 3-5 dB and the noise tempera- ture down to 200-300 K.
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Hübers, H. - W., Semenov, A., Richter, H., Birk, M., Krocka, M., Mair, U., et al. (2002). Terahertz heterodyne receiver with a hot-electron bolometer mixer. In J. Wold, & J. Davidson (Eds.), Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop.
Abstract: During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR.
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Shcherbatenko, M., Lobanov, Y., Finkel, M., Maslennikov, S., Pentin, I., Semenov, A., et al. (2014). Development of a 30 THz heterodyne receiver based on a hot-electron-bolometer mixer. In Proc. 25th Int. Symp. Space Terahertz Technol. (122).
Abstract: We present new Hot-Electron-Bolometer (HEB) mixers designed for mid-IR spectroscopy targeting astrophysical and geophysical observations where high sensitivity and spectral resolution are required. The mixers are made of an ultrathin NbN film deposited on GaAs substrates. Two entirely different types of the devices have been fabricated. The first type is based on a direct radiation coupling concept and the mixing devices are shaped as squares of 5×5 μm 2 (which corresponds to the diffraction limit at the chosen wavelength) and 10×10 μm 2 (which was used to establish a possible influence of the contact pads on the radiation absorption). The second type utilizes a spiral antenna designed with HFSS. The fabrication and layout of the devices as well as the performance comparison will be presented. During the experiments, the HEB mixer was installed on the cold plate of a LHe cryostat. A germanium window and an extended semi-spherical germanium lens are used to couple the radiation. The cryostat is equipped with a germanium optical filter of thickness 0.5 mm and with a center wavelength of 10.6 mμ. The incident power absorption is measured by using the isothermal method. As a Local Oscillator, a 10.6 micrometers line of a CO2 gas laser is used. We further characterize the frequency response of the spiral antenna with a FIR-spectrometer. The noise characteristics of the mixers are determined from a room temperature cold load and a heated black body at ~600 K as a hot load.
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