Antipov, S. V., Vachtomin, Y. B., Maslennikov, S. N., Smirnov, K. V., Kaurova, N. S., Grishina, E. V., et al. (2004). Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz. In Proc. 5-th MSMW (Vol. 2, pp. 592–594). Kharkov, Ukraine.
Abstract: To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz.
|
|
Kaurova, N. S., Finkel, M. I., Maslennikov, S. N., Vahtomin, Y. B., Antipov, S. V., Smirnov, K. V., et al. (2004). Submillimeter mixer based on YBa2Cu3O7-x thin film. In Proc. 1-st conf. Fundamental problems of high temperature superconductivity (291). Moscow-Zvenigorod.
|
Gerecht, E., Musante, C. F., Zhuang, Y., Ji, M., Yngvesson, K. S., Goyette, T., et al. (2000). NbN hot electron bolometric mixer with intrinsic receiver noise temperature of less than five times the quantum noise limit. In Proc. IMS (Vol. 2, pp. 1007–1010).
Abstract: In recent years, improvements in device development and quasi-optical coupling techniques utilizing planar antennas have led to a significant achievement in low noise receivers for the edges of the submillimeter frequency regime. Hot electron bolometric (HEB) receivers made of thin superconducting films such as NbN have produced a viable option for instruments designed to measure the molecular spectra for astronomical applications as well as in remote sensing of the atmosphere in the THz regime. This paper describes an NbN HEB mixer with intrinsic DSB receiver noise temperature of at most five times the quantum noise limit at frequencies as high as 2.24 THz
|
Finkel, M., Vachtomin, Y., Antipov, S., Drakinski, V., Kaurova, N., Voronov, B., et al. (2003). Gain bandwidth and noise temperature of NbTiN HEB mixer. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 276–285).
Abstract: We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz.
|
|
Semenov, A., Il'yin, K., Siegel, M., Smirnov, A., Pavlov, S., Richter, H., et al. (2006). Intermediate frequency bandwidth of a hot-electron mixer: Comparision with bolometric models. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 73–76). Paris, France.
|
