Records |
Author |
Goltsman, G. |
Title |
Simple method for stabilizing power of submillimetric spectrometer |
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Journal Article |
Year |
1972 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
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Issue |
1 |
Pages |
136 |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia |
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1738 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
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Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
5 |
Pages |
185-186 |
Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
2 |
Pages |
63-65 |
Keywords |
Ge, donors, excited states |
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1740 |
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Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Title |
Germanium hot-electron narrow-band detector |
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Journal Article |
Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
Volume |
16 |
Issue |
8 |
Pages |
1346 |
Keywords |
Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Title |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
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Journal Article |
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
14 |
Issue |
6 |
Pages |
241 |
Keywords |
Ge, gamma irradiation, defects, impurities |
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1742 |
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