Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., & Hübers, H. - W. (1999). NbN hot electron bolometric mixers at frequencies between 0.7 and 3.1 THz. Supercond. Sci. Technol., 12(11), 989–991.
Abstract: The performance of NbN-based phonon-cooled hot electron bolometric (HEB) quasioptical mixers is investigated in the 0.7-3.1 THz frequency range. The devices are made from a 3.5-4 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The length of the bolometer microbridge is 0.1-0.2 µm; the width is 1-2 µm. The best results of the DSB receiver noise temperature measured at 1.5 GHz intermediate frequency are: 800 K at 0.7 THz, 1100 K at 1.6 THz, 2000 K at 2.5 THz and 4200 K at 3.1 THz. The measurements were performed with a far infrared laser as the local oscillator (LO) source. The estimated LO power requirement is less than 500 nW at the receiver input. First results on spiral antenna polarization measurements are reported.
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Schubert, J., Semenov, A., Gol'tsman, G., Hübers, H. - W., Schwaab, G., Voronov, B., et al. (1999). Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz. Supercond. Sci. Technol., 12(11), 748–750.
Abstract: We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).
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Khosropanah, P., Gao, J. R., Laauwen, W. M., Hajenius, M., & Klapwijk, T. M. (2007). Low noise NbN hot electron bolometer mixer at 4.3 THz. Appl. Phys. Lett., 91, 221111 (1 to 3).
Abstract: We have studied the sensitivity of a superconducting NbN hot electron bolometer mixer integrated with a spiral antenna at 4.3 THz. Using hot/cold blackbody loads and a beam splitter all in vacuum, we measured a double sideband receiver noise temperature of 1300 K at the optimum local oscillator (LO) power of 330 nW, which is about 12 times the quantum noise (hnu/2kB). Our result indicates that there is no sign of degradation of the mixing process at the superterahertz frequencies. Moreover, a measurement method is introduced which allows us for an accurate determination of the sensitivity despite LO power fluctuations.
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Kroug, M., Cherednichenko, S., Merkel, H., Kollberg, E., Voronov, B., Gol'tsman, G., et al. (2001). NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans. Appl. Supercond., 11(1), 962–965.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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Meledin, D., Tong, C. Y. - E., Blundell, R., Kaurova, N., Smirnov, K., Voronov, B., et al. (2003). Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer. IEEE Trans. Appl. Supercond., 13(2), 164–167.
Abstract: In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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