Author |
Title |
Year |
Publication |
Volume |
Pages |
Semenov, A. D.; Gol’tsman, G. N. |
Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector |
2000 |
J. Appl. Phys. |
87 |
502-510 |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
Gerecht, E.; Musante, C. F.; Zhuang, Y.; Yngvesson, K. S.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers |
1999 |
IEEE Trans. Appl. Supercond. |
47 |
2519-2527 |
Gol’tsman, G. N.; Gershenzon, E. M. |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
1999 |
Appl. Supercond. |
6 |
649-655 |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
1998 |
Phys. Rev. B |
57 |
15623-15628 |
Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. |
Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride |
1997 |
Tech. Phys. Lett. |
23 |
486-488 |
Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
1997 |
Appl. Phys. Lett. |
70 |
1619-1621 |
Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. |
Performance of NbN lattice‐cooled hot‐electron bolometric mixers |
1996 |
J. Appl. Phys. |
80 |
4232-4234 |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |