Records |
Author |
Gupta, D.; Kadin, A. M. |
Title |
Single-photon-counting hotspot detector with integrated RSFQ readout electronics |
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Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
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9 |
Issue |
2 |
Pages |
4487-4490 |
Keywords |
RSFQ, SSPD, SNSPD |
Abstract |
Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology. |
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1080 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
Keywords |
RSFQ, NbN, SIS |
Abstract |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
Title |
Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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Journal Article |
Year |
1999 |
Publication |
Supercond. Sci. Technol. |
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12 |
Issue |
11 |
Pages |
748-750 |
Keywords |
NbN HEB mixers |
Abstract |
We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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298 |
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Galin, I.; Schnitzer, C. A.; Dengler, R. J.; Quintero, O. |
Title |
177–207 GHz radiometer front end, single–side–band measurements |
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Conference Article |
Year |
1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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70 |
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Charlottesville, Virginia, USA |
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RPLAB @ s @ schottky_Tn_1000_at_0p2THz |
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289 |
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Author |
Marazita, St.even M.; Kai Hui; Hesler, Jeffrey L.; Bishop, William L.; Crowe, Thomas W. |
Title |
Progress in submillimeter wavelength integrated mixer technology |
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Conference Article |
Year |
1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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74 |
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Charlottesville, Virginia |
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RPLAB @ s @ schottky_Tn_2970_at_0p69THz |
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290 |
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