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Author Wyss, R. A.; Karasik, B. S.; McGrath, W. R.; Bamble, B.; LeDuc, H. openurl 
  Title Noise and bandwidth measurements of diffusion–cooled Nb hot–electron bolometer mixers at frequencies above the superconductive energy gap Type Conference Article
  Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages 215-229  
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  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Charlottesville, Virginia Editor  
  Language Summary Language Original Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ s @ qoheb_Tn_1250_at_1p1 Serial 293  
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Author Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. openurl 
  Title Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Type Journal Article
  Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal  
  Volume 79 Issue Pages 2049-2051  
  Keywords HEB detector, FIR, far infrared  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ s @ heb_eph_interaction_Gershenzon Serial 315  
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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G. openurl 
  Title Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers Type Journal Article
  Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 72 Issue 12 Pages 1516-1518  
  Keywords HEB mixer; thermal fluctuation noise; TFN  
  Abstract A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 760  
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Author Elant'ev, A. I.; Karasik, B. S. openurl 
  Title Effect of high-frequency current on Nb superconductive film in resistive state Type Journal Article
  Year 1989 Publication Sov. J. Low Temp. Phys. Abbreviated Journal Sov. J. Low Temp. Phys.  
  Volume 15 Issue 7 Pages 379-383  
  Keywords Nb HEB  
  Abstract  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 882  
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Author Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M. url  doi
openurl 
  Title Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation Type Journal Article
  Year 1994 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 64 Issue 22 Pages 3036-3038  
  Keywords YBCO HTS HEB, nonequilibrium  
  Abstract Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1639  
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Author Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. url  doi
openurl 
  Title 9.6 μm wavelength mixing in a patterned YBa2Cu3O7‐δ thin film Type Journal Article
  Year 1996 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 68 Issue 10 Pages 1418-1420  
  Keywords YBCO HTS HEB mixers  
  Abstract Hot‐electron bolometric (HEB) mixing of 9.6 μm infrared radiation from two lasers in high‐quality YBa2Cu3O7−δ (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to ∼150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be ∼25 dB, of which 13 dB was due to the coupling loss. The HEB mixer is very promising for use in heterodyne receivers within the whole infrared range.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1613  
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Author Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation Type Journal Article
  Year 1992 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 72 Issue 11 Pages 5496-5499  
  Keywords YBCO HTS detectors  
  Abstract We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds.  
  Address  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1668  
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Author Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films Type Journal Article
  Year 1994 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 76 Issue 3 Pages 1902-1909  
  Keywords YBCO HTS HEB detector, nonequilibrium response  
  Abstract Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.  
  Address  
  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1637  
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Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse Type Journal Article
  Year 1995 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 77 Issue 8 Pages 4064-4070  
  Keywords YBCO HTS switches  
  Abstract A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1623  
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Author Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S. url  doi
openurl 
  Title Hot electron quasioptical NbN superconducting mixer Type Journal Article
  Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 5 Issue 2 Pages 2232-2235  
  Keywords NbN HEB mixers  
  Abstract Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1622  
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