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Anthore, A., Pothier, H., & Esteve, D. (2003). Density of states in a superconductor carrying a supercurrent. Phys. Rev. Lett., 90(12), 127001 (1 to 4).
Abstract: We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magnetic field.
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Usadel, K. D. (1970). Generalized diffusion equation for superconducting alloys. Phys. Rev. Lett., 25(8), 507.
Abstract: Eilenberger's transportlike equations for a superconductor of type II can be simplified very much in the dirty limit. In this limit a diffusionlike equation is derived which is the generalization of the de Gennes-Maki theory for dirty superconductors to arbitrary values of the order parameter.
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Beck, M., Klammer, M., Lang, S., Leiderer, P., Kabanov, V. V., Gol'tsman, G. N., et al. (2011). Energy-gap dynamics of superconducting NbN thin films studied by time-resolved terahertz spectroscopy. Phys. Rev. Lett., 107(17), 4.
Abstract: Using time-domain terahertz spectroscopy we performed direct studies of the photoinduced suppression and recovery of the superconducting gap in a conventional BCS superconductor NbN. Both processes are found to be strongly temperature and excitation density dependent. The analysis of the data with the established phenomenological Rothwarf-Taylor model enabled us to determine the bare quasiparticle recombination rate, the Cooper pair-breaking rate and the electron-phonon coupling constant, λ=1.1±0.1, which is in excellent agreement with theoretical estimates.
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Shah, N., Pekker, D., & Goldbart, P. M. (2008). Inherent stochasticity of superconductor-resistor switching behavior in nanowires. Phys. Rev. Lett., 101, 207001(1 to 4).
Abstract: We study the stochastic dynamics of superconductive-resistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations. We evaluate the mean switching time using the master-equation formalism, and hence obtain the distribution of switching currents. We find that as the temperature is reduced this distribution initially broadens; only at lower temperatures does it show the narrowing with cooling naively expected for phase slips that are thermally activated. We also find that although several phase-slip events are generally necessary to induce switching, there is an experimentally accessible regime of temperatures and currents for which just one single phase-slip event is sufficient to induce switching, via the local heating it causes.
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Shah, J., Pinczuk, A., Gossard, A. C., & Wiegmann, W. (1985). Energy-loss rates for hot electrons and holes in GaAs quantum wells. Phys. Rev. Lett., 54, 2045–2048.
Abstract: We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
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