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Author Title Year Publication Volume Pages
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. Binding energy of a carrier with a neutral impurity atom in germanium and in silicon 1971 JETP Lett. 14 185-186
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium 1971 JETP Lett. 14 241
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Observation of the free-exciton spectrum at submillimeter wavelengths 1972 JETP Lett. 16 161-162
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. Energy spectrum of free excitons in germanium 1973 JETP Lett. 18 93
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. Intervalley cyclotron-impurity resonance of electrons in n-Ge 1976 JETP Lett. 24 125-128
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon 2001 Jetp Lett. 73 44-47
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. Generation of nanosecond terahertz pulses by the optical rectification method 2012 JETP Lett. 96 94-97