|
|
Titova, N. A., Baeva, E. M., Kardakova, A. I., & Goltsman, G. N. (2020). Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures. In J. Phys.: Conf. Ser. (Vol. 1695, 012190).
Abstract: Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
|
|
|
|
Gayduchenko, I. A., Fedorov, G. E., Stepanova, T. S., Titova, N., Voronov, B. M., But, D., et al. (2016). Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation. In J. Phys.: Conf. Ser. (Vol. 741, 012143 (1 to 6)).
Abstract: Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
|
|
|
|
Saveskul, N. A., Titova, N. A., Baeva, E. M., Semenov, A. V., Lubenchenko, A. V., Saha, S., et al. (2019). Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder. Phys. Rev. Applied, 12(5), 054001.
Abstract: We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
|
|
|
|
Baeva, E. M., Titova, N. A., Veyrat, L., Sacépé, B., Semenov, A. V., Goltsman, G. N., et al. (2021). Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates. Phys. Rev. Applied, 15(5), 054014.
Abstract: We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
|
|
|
|
Baeva, E. M., Titova, N. A., Kardakova, A. I., Piatrusha, S. U., & Khrapai, V. S. (2020). Universal bottleneck for thermal relaxation in disordered metallic films. Jetp Lett., 111(2), 104–108.
Abstract: We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
|
|
