Флоря, И. Н. (2009). Ультрабыстрый однофотонный детектор для оптических применений. In Науч. сессия МИФИ (pp. 45–46).
Abstract: Представлен сверхпроводниковый однофотонный детектор (SSPD) на основе ультратонкой пленки NbN, обладающий рекордным быстродействием. Активный элемент выполнен в виде N сверхпроводящих полосок соединенных параллельно, покрывающих площадку размером 10 мкм х 10 мкм. Для SSPD с N=12 длительность импульса напряжения составляет 200 пс. Полученные результаты открывают путь к детекторам обладающими скоростью счета свыше 1 ГГц, что делает SSPDs весьма привлекательными во многих применениях, в частности для квантовой криптографии. SSPD хорошо согласуется с оптоволокном и легко может быть интегрирован в полностью готовую для работы приемную систему.
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Семенов, А. В. (2010). Проскальзывание фазы, поглощение электромагнитного излучения и формирование отклика в детекторах на основе узких полосок сверхпроводников. Ph.D. thesis, , .
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Seliverstov, S. V., Rusova, A. A., Kaurova, N. S., Voronov, B. M., & Goltsman, G. N. (2017). AC-biased superconducting NbN hot-electron bolometer for frequency-domain multiplexing. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 120–122).
Abstract: We present the results of characterization of fast and sensitive superconducting antenna-coupled THz direct detector based on NbN hot-electron bolometer (HEB) with AC-bias. We discuss the possibility of implementation of the AC-bias for design the readout system from the multi-element arrays of HEBs using standard technique of frequency-domain multiplexing. We demonstrate experimentally that this approach does not lead to significant deterioration of the HEB sensitivity compared with the value obtained for the same detector with DC- bias. Results of a numerical calculations of the HEB responsivity at AC-bias are in a good agreement with the experiment.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Desmaris, V., Belitsky, V., et al. (2017). Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 147–148).
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Zolotov, P., Divochiy, A., Korneeva, Y., Vakhtomin, Y., Seleznev, V., & Smirnov, K. (2015). Capability investigation of superconducting single-photon detectors, optimized for 800–1200 nm spectrum range.
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