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Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. |
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Energy-loss rates for hot electrons and holes in GaAs quantum wells |
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1985 |
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Phys. Rev. Lett. |
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Phys. Rev. Lett. |
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54 |
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2045-2048 |
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2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
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We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. |
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Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. |
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Title |
Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes |
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1985 |
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Phys. B+C |
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134 |
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1-3 |
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174-178 |
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2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions |
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The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented. |
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634 |
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Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. |
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Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs |
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2010 |
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Изв. РАН Сер. Физ. |
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Изв. РАН Сер. Физ. |
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74 |
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1 |
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110-112 |
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2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
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Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием. |
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Russian |
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Duplicated as 1217 |
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RPLAB @ gujma @ |
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642 |
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Feautrier, P.; le Coarer, E.; Espiau de Lamaestre, R.; Cavalier, P.; Maingault, L.; Villégier, J-C.; Frey, L.; Claudon, J.; Bergeard, N.; Tarkhov, M.; Poizat, J-P. |
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High-speed superconducting single photon detectors for innovative astronomical applications |
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2008 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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97 |
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1 |
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10 |
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SSPD |
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Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near infrared wavelengths. Taking advantage of recent results obtained in the Sinphonia project, the goal of our research is to demonstrate the feasibility of a new family of micro-spectrometers, called SWIFTS (Stationary Wave Integrated Fourier Transform Spectrometer), associated to an array of SSPD, the whole assembly being integrated on a monolithic sapphire substrate coupling the detectors array to a waveguide injecting the light. This unique association will create a major breakthrough in the domain of visible and infrared spectroscopy for all applications where the space and weight of the instrument is limited. SWIFTS is an innovative way to achieve very compact spectro-detectors using nano-detectors coupled to evanescent field of dielectric integrated optics. The system is sensitive to the interferogram inside the dielectric waveguide along the propagation path. Astronomical instruments will be the first application of such SSPD spectrometers. In this paper, we describes in details the fabrication process of our SSPD built at CEA/DRFMC using ultra-thin NbN epitaxial films deposited on different orientations of Sapphire substrates having state of the art superconducting characteristics. Electron beam lithography is routinely used for patterning the devices having line widths below 200 nm and down to 70 nm. An experimental set-up has been built and used to test these SSPD devices and evaluate their photon counting performances. Photon counting performances of our devices have been demonstrated with extremely low dark counts giving excellent signal to noise ratios. The extreme compactness of this concept is interesting for space spectroscopic applications. Some new astronomical applications of such concept are proposed in this paper. |
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RPLAB @ gujma @ |
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648 |
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Zhizhon, Yan; Majedi, Hamed A. |
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Optoelectronic mixing in the NbN superconducting nanowire single photon detectors |
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2009 |
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Proc. SPIE |
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Proc. SPIE |
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3786 |
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9 |
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Optoelectronic devices, microwave superconductivity, nonlinearity, single photon detector, superconductivity, nanowire, optical mixing, microwave mixers, amplitude modulation, intensity modulation. |
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In this paper, we present our experimental results on the electrically pumped optoelectronic mixing effect exhibited in a niobium nitride (NbN) superconducting nanowire. The experimental setup in order to test the mixer has been reported in detail. This superconductive nanowire optoelectronic mixer demonstrates photodetection and mixing in an integrated manner. We have explored both effects under a great variety of external conditions, such as temperature and bias current, in order to seek potential ways toward quantum optoelectronic detection and mixing by such nanowire device. |
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