|
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
The excitonic Zeeman effect in uniaxially-strained germanium |
1987 |
Sov. Phys. JETP |
65 |
1233-1241 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
1996 |
Phys. Rev. B Condens. Matter. |
53 |
R7592-R7595 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
55-58 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. |
Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure |
1997 |
Proc. 4-th Int. Semicond. Device Research Symp. |
|
163-166 |
|
|
Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Low energy excitation in La2CuO4 |
1990 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
3 |
832-837 |
|
|
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
|
|
Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
1998 |
Phys. Rev. B |
57 |
15623-15628 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions |
1996 |
Surface Science |
361-362 |
569-573 |
|
|
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Electron–phonon interaction in disordered conductors |
1999 |
Phys. Rev. B Condens. Matter |
263-264 |
190-192 |
|
|
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
1996 |
J. of Communications Technology and Electronics |
41 |
408-414 |
|