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Gao, J. R., Hajenius, M., Tichelaar, F. D., Voronov, B., Grishina, E., Klapwijk, T. M., et al. (2006). Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 187–189).
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Smirnov, A. V., Larionov, P. A., Finkel, M. I., Maslennikov, S. N., Voronov, B. M., & Gol'tsman, G. N. (2008). NbZr films for THz phonon-cooled HEB mixers. In Proc. 19th Int. Symp. Space Terahertz Technol. (pp. 44–47). Groningen, Netherlands.
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Ryabchun, S. A., Tretyakov, I. V., Finkel, M. I., Maslennikov, S. N., Kaurova, N. S., Seleznev, V. A., et al. (2009). NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 151–154). Charlottesville, USA.
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Lobanov, Y., Tong, C., Blundell, R., & Gol'tsman, G. (2009). A study of direct detection effect on the linearity of hot electron bolometer mixers. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 282–287).
Abstract: We have performed a study of how direct detection affects the linearity and hence the calibration of an HEB mixer. Two types of waveguide HEB devices have been used: a 0.8 THz HEB mixer and a 1.0 THz HEB mixer which is ~5 times smaller than the former. Two independent experimental approaches were used. In the ΔG/G method, the conversion gain of the HEB mixer is first measured as a function of the bias current for a number of bias voltages. At each bias setting, we carefully measure the change in the operating current when the input loads are switched. From the measured data, we can derive the expected difference in gain between the hot and cold loads. In the second method (injection method [1]), the linearity of the HEB mixer is independently measured by injecting a modulated signal for different input load temperatures. The results of both approaches confirm that there is gain compression in the operation of HEB mixers. Based on the results of our measurements, we discuss the impact of direct detection effects on the operation of HEB mixers.
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Krause, S., Mityashkin, V., Antipov, S., Gol'tsman, G., Meledin, D., Desmaris, V., et al. (2016). Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method. In Proc. 27th Int. Symp. Space Terahertz Technol. (pp. 30–32).
Abstract: In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
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