|
|
Yates, S. J. C., Baryshev, A. M., Baselmans, J. J. A., Klein, B., & Güsten, R. (2009). Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors. Appl. Phys. Lett., 95(4), 3.
Abstract: Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios.
|
|
|
|
Minaeva, O., Bonato, C., Saleh, B. E. A., Simon, D. S., & Sergienko, A. V. (2009). Odd- and even-order dispersion cancellation in quantum interferometry. Phys. Rev. Lett., 102(10), 4.
Abstract: We describe a novel effect involving odd-order dispersion cancellation. We demonstrate that odd- and even-order dispersion cancellation may be obtained in different regions of a single quantum interferogram using frequency-anticorrelated entangled photons and a new type of quantum interferometer. This offers new opportunities for quantum communication and metrology in dispersive media.
|
|
|
|
Ожегов, Р. В., Окунев, О. В., Гольцман, Г. Н., Филиппенко, Л. В., & Кошелец, В. П. (2009). Флуктуационная чувствительность сверхпроводящего интегрального приемника терагерцового диапазона частот. Радиотех. электроник., 54(6), 750–755.
Abstract: Исследована зависимость флуктуационной чувствительности сверхпроводящего интегрального приемника (СИП) от шумовой температуры приемника и величины входного сигнала. Измерена рекордная флуктуационная чувствительность приемника (13 ± 2 мК), полученная при шумовой температуре приемника 200 К, ширине полосы промежуточных частот 4 ГГц и постоянной времени 1 с. При уменьшении входного сигнала наблюдалось улучшение флуктуационной чувствительности; предложено обÑŠяснение полученного эффекта: причиной является уменьшение влияния нестабильностей источников питания приемника и усилительного тракта при снижении входного сигнала.
|
|
|
|
Смирнов, А. В. (2009). Исследование полосы преобразования терагерцовых смесителей на эффекте электронного разогрева в NbZr, NbN и в одиночном гетеропереходе AlGaAs/GaAs.
|
|
|
|
Gol'tsman, B. M., Kutasov, V. A., & Luk'yanova, L. N. (2009). Mechanism of formation of texture and its influence on the strength of thermoelectric p-Bi0.5Sb1.5Te3. Phys. Sol. St., 51(4), 747–749.
Abstract: It is established that, in preparing p-Bi0.5Sb1.5Te3 by vertical zone melting, in addition to the directional texture (characteristic of materials exhibiting a highly anisotropic growth rate) in which the cleavage planes of crystal grains are parallel to the direction of propagation of the crystallization front, other texture types can arise, in which the orientation of grain cleavage planes is ordered in a cross-sectional plane of the ingot. Two types of such textures, “radial†and “circular,†were observed. In a radial texture, the lines of intersection of grain cleavage planes with a cross-sectional plane of the ingot are oriented along radii of this cross section and, in a circular texture, these lines of intersection are oriented approximately perpendicular to a radius crossing the grain. The formation of a radial texture is associated with rotation of the ampoule with the crystallizing substance about its vertical axis causing centrifugal flows of the melt. The formation of a circular texture is associated with the orientation effect of the ampoule walls and with circular motion of the melt during torsional oscillations of the ampoule about the vertical axis. Ingots with a radial texture exhibit much lower resistance to splitting along their axis than ingots with a circular texture do. An explanation is provided for this fact.
|
|
