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Author |
Goltsman, G. N. |
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Title |
Ultrafast nanowire superconducting single-photon detector with photon number resolving capability |
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Conference Article |
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Year |
2009 |
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Proc. SPIE |
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Proc. SPIE |
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7236 |
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72360D (1 to 11) |
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PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films |
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In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time. |
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SPIE |
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Arakawa, Y.; Sasaki, M.; Sotobayashi, H. |
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1403 |
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Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
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Title |
Spectral sensitivity of narrow strip NbN superconducting single-photon detector |
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Conference Article |
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Year |
2011 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
8072 |
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Pages |
80720G (1 to 9) |
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Keywords |
NbN SSPD, SNSPD |
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Superconducting single-photon detector (SSPD) is patterned from 4-nm-thick NbN film deposited on sapphire substrate as a 100-nm-wide strip. Due to its high detection efficiency, low dark counts, and picosecond timing jitter SSPD has become a competitor to the InGaAs avalanche photodiodes at 1550 nm and longer wavelengths. Although the SSPD is operated at liquid helium temperature its efficient single-mode fibre coupling enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. In our strive to increase the detection efficiency at 1550 nm and longer wavelengths we developed and fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm. To increase the voltage response of the device we utilized cascade switching mechanism: we connected 50-nm-wide and 10-μm-long strips in parallel covering the area of 10 μmx10 μm. Absorption of a photon breaks the superconductivity in a strip leading to the bias current redistribution between other strips followed their cascade switching. As the total current of all the strips about is 1 mA by the order of magnitude the response voltage of such an SSPD is several times higher compared to the traditional meander-shaped SSPDs. In middle infrared (about 3 μm wavelength) these devices have the detection efficiency several times higher compared to the traditional SSPDs. |
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SPIE |
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Fiurásek, J.; Prochazka, I. |
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Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III |
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1387 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Title |
Ultrafast superconducting single-photon optical detectors and their applications |
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Journal Article |
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Year |
2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
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2 |
Pages |
1151-1157 |
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Keywords |
NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Author |
Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. |
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Title |
A comparison of VN and NbN thin films towards optimal SNSPD efficiency |
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Journal Article |
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Year |
2021 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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31 |
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5 |
Pages |
1-4 |
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NbN SSPD, SNSPD, WSi |
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Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. |
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1051-8223 |
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1223 |
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Author |
Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. |
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Title |
Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN |
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Journal Article |
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Year |
2021 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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31 |
Issue |
5 |
Pages |
1-5 |
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Keywords |
NbN SSPD, SNSPD |
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We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. |
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1051-8223 |
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1222 |
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Author |
Lusche, Robert; Semenov, Alexey; Huebers, Heinz-Willhelm; Ilin, Konstantin; Siegel, Michael; Korneeva, Yuliya; Trifonov, Andrey; Korneev, Alexander; Goltsman, Gregory |
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Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors |
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Abstract |
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2013 |
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INIS |
Abbreviated Journal |
INIS |
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46 |
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8 |
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1-3 |
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TaN, NbN SSPD, SNSPD |
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The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors. |
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1374 |
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Author |
Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
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Title |
A method of optimization of the NbN superconducting single-photon detector |
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Miscellaneous |
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2004 |
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INIS |
Abbreviated Journal |
INIS |
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36 |
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27 |
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1-2 |
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NbN SSPD, SNSPD |
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5-th International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION |
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Reference num. 36060124 |
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1485 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. |
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NbN superconducting single-photon detectors coupled with a communication fiber |
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Miscellaneous |
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2004 |
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INIS |
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37 |
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2 |
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1-2 |
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NbN SSPD, SNSPD |
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Stare Jablonki, Poland |
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8-th Electron Technology Conference ELTE |
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1486 |
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Il'in, K. S.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
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Title |
Infrared hot-electron NbN superconducting photodetectors for imaging applications |
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Journal Article |
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Year |
1999 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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12 |
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11 |
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755-758 |
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NbN SSPD, SNSPD |
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We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. |
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0953-2048 |
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1562 |
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Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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An ultrafast NbN hot-electron single-photon detector for electronic applications |
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Journal Article |
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2002 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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15 |
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12 |
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1689-1692 |
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NbN SSPD, SNSPD, QE, jitter, dark counts |
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We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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0953-2048 |
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1533 |
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