|
|
Il’in, K. S., Ptitsina, N. G., Sergeev, A. V., Gol’tsman, G. N., Gershenzon, E. M., Karasik, B. S., et al. (1998). Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films. Phys. Rev. B, 57(24), 15623–15628.
Abstract: A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
|
|
|
|
Heusinger, M. A., Nebosis, R. S., Schatz, W., Renk, K. F., Gol’tsman, G. N., Karasik, B. S., et al. (1993). Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film. In M. Meissner, & R. O. Pohl (Eds.), Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences (Vol. 112, pp. 193–195).
Abstract: We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
|
|
|
|
Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1994). Subnanosecond S-N and N-S switching of YBCO film induced by current pulse. Phys. C: Supercond., 235-240, 1981–1982.
Abstract: A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made.
|
|
|
|
Sergeev, A., Karasik, B. S., Ptitsina, N. G., Chulkova, G. M., Il'in, K. S., & Gershenzon, E. M. (1999). Electron–phonon interaction in disordered conductors. Phys. Rev. B Condens. Matter, 263-264, 190–192.
Abstract: The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
|
|
|
|
Karasik, B. S., Il'in, K. S., Ptitsina, N. G., Gol'tsman, G. N., Gershenzon, E. M., Pechen', E. V., et al. (1998). Electron-phonon scattering rate in impure NbC films. In NASA/ADS (Y35.08).
Abstract: The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
|
|
