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Author |
Title |
Year |
Publication |
DOI |
Links  |
|
|
Gol’tsman, G. N.; Gershenzon, E. M. |
Phonon-cooled hot-electron bolometric mixer: overview of recent results |
1999 |
Appl. Supercond. |
10.1016/S0964-1807(99)00024-1 |
|
|
|
Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
2001 |
Infrared Physics & Technology |
10.1016/S1350-4495(00)00057-8 |
|
|
|
Gol'tsman, G. N. |
Hot electron bolometric mixers: new terahertz technology |
1999 |
Infrared Physics & Technology |
10.1016/S1350-4495(99)00011-0 |
|
|
|
Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. |
Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer |
2012 |
Phys. Procedia |
10.1016/j.phpro.2012.06.169 |
|
|
|
Korneev, A.; Korneeva, Y.; Florya, I.; Voronov, B.; Goltsman, G. |
NbN nanowire superconducting single-photon detector for mid-infrared |
2012 |
Phys. Procedia |
10.1016/j.phpro.2012.06.215 |
|
|
|
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. |
Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation |
2021 |
Adv. Electron. Mater. |
10.1002/aelm.202000872 |
|
|
|
Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
2019 |
Phys. Status Solidi RRL |
10.1002/pssr.201900187 |
|
|
|
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
|
|
|
|
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
1996 |
J. of Communications Technology and Electronics |
|
|
|
|
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
1983 |
Sov. Phys. Semicond. |
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