| Records |
| Author |
Rodriguez-Morales, F.; Zannoni, R.; Nicholson, J.; Fischetti, M.; Yngvesson, K. S.; Appenzeller, J. |
| Title |
Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube |
Type |
Journal Article |
| Year |
2006 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
89 |
Issue |
8 |
Pages |
083502 |
| Keywords |
carbon nanotube, GHz heterodyne detector, direct detector |
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| ISSN |
0003-6951 |
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565 |
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| Author |
Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. |
| Title |
Terahertz detection in single wall carbon nanotubes |
Type |
Journal Article |
| Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
92 |
Issue |
3 |
Pages |
033105 |
| Keywords |
HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz |
| Abstract |
It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. |
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0003-6951 |
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NEP is not shown |
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no |
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566 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
| Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
Type |
Journal Article |
| Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
| Volume |
33 |
Issue |
5 |
Pages |
551-554 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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| ISSN |
1063-7826 |
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no |
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1571 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
| Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
Type |
Journal Article |
| Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
| Volume |
53 |
Issue |
12 |
Pages |
R7592-R7595 |
| Keywords |
2DEG, AlGaAs/GaAs heterostructures |
| Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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no |
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1612 |
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Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
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Pages |
47-50 |
| Keywords |
NbN HEB mixers |
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| Address |
Charlottesville, Virginia |
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no |
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1601 |
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