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Karasik, B. S., Zorin, M. A., Milostnaya, I. I., Elantev, A. I., Gol’tsman, G. N., & Gershenzon, E. M. (1994). Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films. In R. A. Buhrman, J. T. Clarke, K. Daly, R. H. Koch, J. A. Luine, & R. W. Simon (Eds.), Proc. SPIE (Vol. 2160, pp. 74–82). SPIE.
Abstract: We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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Zhang, J., Verevkin, A., Slysz, W., Chulkova, G., Korneev, A., Lipatov, A., et al. (2017). Time-resolved characterization of NbN superconducting single-photon optical detectors. In J. C. Armitage (Ed.), Proc. SPIE (Vol. 10313, 103130F (1 to 3)). SPIE.
Abstract: NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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Gol’tsman, G. N., & Gershenzon, E. M. (1993). High speed hot-electron superconducting bolometer. In J. R. Birch, & T. J. Parker (Eds.), Proc. SPIE (Vol. 2104, pp. 181–182). SPIE.
Abstract: Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
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Schwaab, G. W., Auen, K., Bruendermann, E., Feinaeugle, R., Gol’tsman, G. N., Huebers, H. - W., et al. (1998). 2- to 6-THz heterodyne receiver array for the Stratospheric Observatory for Infrared Astronomy (SOFIA). In T. G. Phillips (Ed.), Proc. SPIE (Vol. 3357, pp. 85–96). SPIE.
Abstract: The Institute of Space Sensor Technology of the German Aerospace Center (DLR) is developing a heterodyne array receiver for the frequency range 2 to 6 THz for the Stratospheric Observatory for Infrared Astronomy (SOFIA). Key science issues in that frequency range are the observation of lines of atoms [e.g. (OI)], ions [e.g. (CII), (NII)], and molecules (e.g. OH, HD, CO) with high spectral resolution to study the dynamics and evolution of galactic and extragalactic objects. Long term goal is the development of an integrated array heterodyne receiver with superconducting hot electron bolometric (HEB) mixers and p-type Ge or Si lasers as local oscillators. The first generation receiver will be composed of HEB mixers in a 2 pixel 2 polarization array which will be pumped by a gas laser local oscillator. Improved Schottky diode mixers are the backup solution for the HEBs. The state of the art of HEB mixer and p-type Ge laser technology are described as well as possible improvements in the ’conventional’ optically pumped far-infrared laser and Schottky diode mixer technology. Finally, the frequency coverage of the first generation heterodyne receiver for some important astronomical transitions is discussed. The expected sensitivity is compared to line fluxes measured by the ISO satellite.
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Huebers, H. - W., Schubert, J., Semenov, A., Gol’tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1999). NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers. In J. M. Chamberlain (Ed.), Proc. SPIE (Vol. 3828, pp. 410–416). Spie.
Abstract: We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
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