| Records |
| Author |
Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G. |
| Title |
Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons |
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Journal Article |
| Year |
2008 |
Publication |
Acta Physica Polonica A |
Abbreviated Journal |
Acta Physica Polonica A |
| Volume |
113 |
Issue |
3 |
Pages |
955-958 |
| Keywords |
SSPD, SNSPD |
| Abstract |
Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe. |
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1414 |
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Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. |
| Title |
Hot-electron superconducting mixers for 20-500 GHz operation |
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Conference Article |
| Year |
1994 |
Publication |
Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. |
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| Volume |
2250 |
Issue |
4D |
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276-278 |
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Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. |
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RPLAB @ phisix @ |
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981 |
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Zhang, Jin; Slysz, W.; Verevkin, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G. N.; Sobolewski, R. |
| Title |
Response time characterization of NbN superconducting single-photon detectors |
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Journal Article |
| Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
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| Volume |
13 |
Issue |
2 |
Pages |
180-183 |
| Keywords |
SSPD jitter, SNSPD jitter |
| Abstract |
We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps. |
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IEEE |
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1058 |
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Verevkin, A.; Zhang, J.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Gol'tsman, G. N.; Semenov, A. |
| Title |
Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range |
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Journal Article |
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2002 |
Publication |
Appl. Phys. Lett. |
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80 |
Issue |
25 |
Pages |
4687-4689 |
| Keywords |
NbN SSPD, SNSPD, QE |
| Abstract |
We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications. |
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331 |
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Ozhegov, R.; Morozov, D.; Maslennikov, S.; Okunev, O.; Smirnov, K.; Gol'tsman, G. |
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Submillimeter wave range imaging system for registering human body radiation and finding out the things covered under clothes |
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2004 |
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Proc. 3rd Int. exhibition and conf. Non-Destructive Testing Equipment and Devices |
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Moscow |
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345 |
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Ozhegov, R.; Maslennikov, S.; Morozov, D.; Okunev, O.; Smirnov, K.; Gol'tsman, G. |
| Title |
Imaging system for submillimeter wave range |
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Conference Article |
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2004 |
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Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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RPLAB @ s @ thzimaging_vnksf10_2004 |
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347 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
| Title |
Picosecond superconducting single-photon optical detector |
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Journal Article |
| Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
79 |
Issue |
6 |
Pages |
705-707 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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1543 |
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Słysz, W.; Węgrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Bohi, P.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.; Pearlman, A.; Cross, A.; Komissarov, I.; Verevkin, A.; Sobolewski, R. |
| Title |
Fiber-coupled single-photon detectors based on NbN superconducting nanostructures for practical quantum cryptography and photon-correlation studies |
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Journal Article |
| Year |
2006 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
88 |
Issue |
26 |
Pages |
261113 (1 to 3) |
| Keywords |
SSPD, SNSPD |
| Abstract |
We have fabricated and tested a two-channel single-photon detector system based on two fiber-coupled superconducting single-photon detectors (SSPDs). Our best device reached the system quantum efficiency of 0.3% in the 1540-nm telecommunication wavelength with a fiber-to-detector coupling factor of about 30%. The photoresponse consisted of 2.5-ns-wide voltage pulses with a rise time of 250ps and timing jitter below 40ps. The overall system response time, measured as a second-order, photon cross-correlation function, was below 400ps. Our SSPDs operate at 4.2K inside a liquid-helium Dewar, but their optical fiber inputs and electrical outputs are at room temperature. Our two-channel detector system should find applications in practical quantum cryptography and in antibunching-type quantum correlation measurements.
The authors would like to thank Dr. Marc Currie for his assistance in early time-resolved photoresponse measurements and Professor Atac Imamoglu for his support. This work was supported by the Polish Ministry of Science under Project No. 3 T11B 052 26 (Warsaw), RFBR 03-02-17697 and INTAS 03-51-4145 grants (Moscow), CRDF Grant No. RE2-2531-MO-03 (Moscow), RE2-2529-MO-03 (Moscow and Rochester), and US AFOSR FA9550-04-1-0123 (Rochester). Additional funding was provided by the grants from the MIT Lincoln Laboratory and BBN Technologies Corp. |
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0003-6951 |
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1449 |
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Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E. |
| Title |
NbN hot electron superconducting mixers for 100 GHz operation |
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Journal Article |
| Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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5 |
Issue |
2 |
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3065-3068 |
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NbN HEB mixers |
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NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K. |
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1051-8223 |
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About LO power required |
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no |
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255 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
| Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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Journal Article |
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1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
| Keywords |
NbN HEB mixers |
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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