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Author Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
Year 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников
Volume 6 Issue Pages 362-363
Keywords Ge, cyclotron resonance, quantizing magnetic fields
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Notes Approved no
Call Number Serial 1774
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Author Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions Type Journal Article
Year 1976 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников
Volume 10 Issue Pages 1379-1383
Keywords Ge, cyclotron resonance, charged impurities,
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Notes Approved no
Call Number Serial 1772
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Author Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R.
Title Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions Type Conference Article
Year 2002 Publication Mater. Sci. Forum Abbreviated Journal Mater. Sci. Forum
Volume 384-3 Issue Pages 107-116
Keywords 2DEG, AlGaAs/GaAs
Abstract A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
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Area Expedition Conference Materials Science Forum
Notes Approved no
Call Number Serial 1536
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Author Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I.
Title Electron-phonon scattering rate in impure NbC films Type Abstract
Year 1998 Publication NASA/ADS Abbreviated Journal NASA/ADS
Volume Issue Pages Y35.08
Keywords NbC films
Abstract The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Area Expedition Conference American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA
Notes Approved no
Call Number Serial 1591
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Author Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S.
Title Lecture demonstrations of properties of superconductors and liquid helium Type Journal Article
Year 1987 Publication USSR Rept Phys. Math. JPRS UPM Abbreviated Journal USSR Rept Phys. Math. JPRS UPM
Volume 24 Issue 7 Pages 51
Keywords demonstrations, lections
Abstract New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated.
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Notes Approved no
Call Number Serial 1704
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Author Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.
Title Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves Type Conference Article
Year 1986 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 50 Issue Pages 280-281
Keywords Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect
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Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN 0367-6755 ISBN Medium
Area Expedition Conference 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985
Notes Approved no
Call Number Serial 1708
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages 454-455
Keywords Ge, exciton photoconduction
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Area Expedition Conference
Notes Approved no
Call Number Serial 1715
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Author Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N.
Title Population of excited-states of small admixtures in germanium Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1154-1159
Keywords Ge, excited states, admixtures
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1723
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Author Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
Title Germanium hot-electron narrow-band detector Type Journal Article
Year 1971 Publication Sov. Radio Engineering And Electronic Physics Abbreviated Journal Sov. Radio Engineering And Electronic Physics
Volume 16 Issue 8 Pages 1346
Keywords Ge HEB detectors
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Publisher Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 Place of Publication Editor
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Area Expedition Conference
Notes Approved no
Call Number Serial 1741
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Author Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G.
Title Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors Type Journal Article
Year 1983 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 17 Issue 8 Pages 908-913
Keywords BWO spectroscopy, pure semiconductors, residual impurities
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Notes Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках Approved no
Call Number Serial 1714
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Author Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M.
Title On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data Type Journal Article
Year 1996 Publication J. of Communications Technology and Electronics Abbreviated Journal J. of Communications Technology and Electronics
Volume 41 Issue 5 Pages 408-414
Keywords submillimeter waves, transmission
Abstract A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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ISSN 1064-2269 ISBN Medium
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Notes Радиотехника и электроника 41, no. 4 (1996): 441-447 Approved no
Call Number Serial 1611
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Author Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
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Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
Title Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions Type Journal Article
Year 1996 Publication Surface Science Abbreviated Journal Surface Science
Volume 361-362 Issue Pages 569-573
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0039-6028 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1609
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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I.
Title Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
Year 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 57 Issue 24 Pages 15623-15628
Keywords NbC films
Abstract A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1585
Permanent link to this record
 
 
Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue 16 Pages 10089-10096
Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1766
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