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Author An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. openurl 
  Title Infrared phototransistor using capacitively coupled two-dimensional electron gas layers Type Journal Article
  Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 172106 - 172106-3  
  Keywords 2DEG  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 603  
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Author Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. openurl 
  Title Energy-loss rates for hot electrons and holes in GaAs quantum wells Type Journal Article
  Year 1985 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume 54 Issue Pages 2045-2048  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.  
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  Notes Approved no  
  Call Number Serial 633  
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Author Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. openurl 
  Title Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes Type Journal Article
  Year 1985 Publication Phys. B+C Abbreviated Journal  
  Volume 134 Issue 1-3 Pages 174-178  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.  
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  Notes Approved no  
  Call Number Serial 634  
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Author Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki openurl 
  Title Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation Type Journal Article
  Year 1987 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 62 Issue 3 Pages 1010-1016  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The time‐resolved luminescence spectra from excited conduction subbands in three samples of multi‐quantum‐well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high‐density excitations by a 30‐ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time‐resolved spectrum to the observed, and the time‐dependent electron energy was obtained by using these parameters. The energy‐loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron‐polar phonon scattering, including the screening effect due to the high carrier density.  
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  Notes Approved no  
  Call Number Serial 635  
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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. openurl 
  Title Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs Type Journal Article
  Year 2010 Publication Изв. РАН Сер. Физ. Abbreviated Journal Изв. РАН Сер. Физ.  
  Volume 74 Issue 1 Pages 110-112  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.  
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  Language Russian Summary Language Original Title  
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  Notes Duplicated as 1217 Approved no  
  Call Number RPLAB @ gujma @ Serial 642  
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Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. openurl 
  Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
  Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 95 Issue 19 Pages 3  
  Keywords 2DEG  
  Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 673  
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
  Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 61 Issue 7 Pages 591-595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.  
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  Notes Approved no  
  Call Number Serial 1624  
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Author Гольцман, Г. Н.; Смирнов, К. В. url  openurl
  Title По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Type Journal Article
  Year 2001 Publication Письма в ЖЭТФ Abbreviated Journal Письма в ЖЭТФ  
  Volume 74 Issue 9 Pages 532-538  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.  
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  Notes Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” Approved no  
  Call Number Serial 1832  
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
  Year 1999 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 33 Issue 5 Pages 551-554  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.  
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  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1571  
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Author Gol’tsman, G. N.; Smirnov, K. V. url  doi
openurl 
  Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 74 Issue 9 Pages 474-479  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no  
  Call Number Serial 1541  
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