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Gupta, D.; Kadin, A. M. |
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Single-photon-counting hotspot detector with integrated RSFQ readout electronics |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4487-4490 |
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RSFQ, SSPD, SNSPD |
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Abstract |
Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology. |
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1080 |
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Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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Journal Article |
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Year |
1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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1999 |
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Supercond. Sci. Technol. |
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12 |
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11 |
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748-750 |
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NbN HEB mixers |
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We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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298 |
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Galin, I.; Schnitzer, C. A.; Dengler, R. J.; Quintero, O. |
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177–207 GHz radiometer front end, single–side–band measurements |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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70 |
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Charlottesville, Virginia, USA |
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RPLAB @ s @ schottky_Tn_1000_at_0p2THz |
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289 |
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Marazita, St.even M.; Kai Hui; Hesler, Jeffrey L.; Bishop, William L.; Crowe, Thomas W. |
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Title |
Progress in submillimeter wavelength integrated mixer technology |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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74 |
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Charlottesville, Virginia |
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RPLAB @ s @ schottky_Tn_2970_at_0p69THz |
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290 |
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Hesler, Jeffrey L.; Hui, Kai; Crowe, Thomas W. |
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A fixed–tuned 400 GHz subharmonic mixer using planar Schottky diods |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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95 |
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Charlottesville, Virginia, USA |
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RPLAB @ s @ schottky_Tn_1120_at_0p42THz |
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291 |
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Merkel, H.; Khosropanah, P.; Yagubov, P.; Kollberg, E. |
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A hot spot mixer model for superconducting phonone–cooled HEB far above the quasipartical band gap |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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592-606 |
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Charlottesville, Virginia |
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292 |
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Wyss, R. A.; Karasik, B. S.; McGrath, W. R.; Bamble, B.; LeDuc, H. |
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Noise and bandwidth measurements of diffusion–cooled Nb hot–electron bolometer mixers at frequencies above the superconductive energy gap |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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215-229 |
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RPLAB @ s @ qoheb_Tn_1250_at_1p1 |
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293 |
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Karpov, A.; Blondel, J.; Voss, M.; Gundlach, K. H. |
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A three photon noise SIS heterodyne receiver at submillimeter wavelength |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4456-4459 |
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RPLAB @ s @ sis_Karpov_1999 |
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300 |
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Chattopadhyay, G.; Rice, F.; Miller, D.; LeDuc, H. G.; Zmuidzinas, J. |
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A 530-GHz balanced mixer |
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1999 |
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IEEE Microw. and Guided Wave Lett. |
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9 |
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11 |
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467-469 |
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RPLAB @ s @ sis_Chattopadhyay_1999 |
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