|
|
Cherednichenko, S., Yagoubov, P., Il'in, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In Proc. 27th Eur. Microwave Conf. (Vol. 2, pp. 972–977). IEEE.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
|
|
|
|
Kroug, M., Cherednichenko, S., Merkel, H., Kollberg, E., Voronov, B., Gol'tsman, G., et al. (2001). NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans. Appl. Supercond., 11(1), 962–965.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
|
|
|
|
Cherednichenko, S., Kollberg, E., Angelov, I., Drakinskiy, V., Berg, T., & Merkel, H. (2005). Effect of the direct detection effect on the HEB receiver sensitivity calibration. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 235–239). Göteborg, Sweden.
Abstract: We analyze the scale of the HEB receiver sensitivity calibration error caused by the so called “direct detection effect”. The effect comes from changing of the HEB parameters when whey face the calibration loads of different temperatures. We found that for HIFI Band 6 mixers (Herschel Space Observatory) the noise temperature error is of the order of 8% for 300K/77K loads (lab receiver) and 2.5% for 100K/10K loads (in HIFI). Using different approach we also predict that with an isolator between the mixer and the low noise amplifiers the error can be much smaller.
|
|
|
|
Meledin, D., Pantaleev, M., Pavolotsky, A., Risacher, C., Belitsky, V., Drakinskiy, V., et al. (2005). Balanced waveguide HEB mixer for APEX 1.3 THz receiver. In Proc. 16th Int. Symp. Space Terahertz Technol.. Göteborg, Sweden.
|
|
|
|
Merkel, H. F., Khosropanah, P., Sigfrid Yngvesson, K., Cherednichenko, S., Kroug, M., Adam, A., et al. (2001). An active zone small signal model for hot-electron bolometric mixers. In Proc. 12th Int. Symp. Space Terahertz Technol. (55). San Diego, CA, USA.
|
|
|
|
Khosropanah, P., Merkel, H., Yngvesson, S., Adam, A., Cherednichenko, S., & Kollberg, E. (2000). A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 474–488). University of Michigan, Ann Arbor, MI USA.
Abstract: A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted.
|
|
|
|
Kawamura, J., Blundell, R., Tong, C. -yu E., Gol’tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths. Appl. Phys. Lett., 70(12), 1619–1621.
Abstract: Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell.
|
|
|
|
Il'in, K. S., Lindgren, M., Currie, M. A., Semenov, D., Gol'tsman, G. N., Sobolewski, R., et al. (2000). Picosecond hot-electron energy relaxation in NbN superconducting photodetectors. Appl. Phys. Lett., 76(19), 2752–2754.
Abstract: We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect.
|
|
|
|
Cherednichenko, S., Drakinskiy, V., Baubert, J., Lecomte, B., Dauplay, F., Krieg, J. M., et al. (2006). 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers. In Proc. SPIE (Vol. 6275, 62750I (1 to 11)).
Abstract: A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
|
|
|
|
Svechnikov, S., Gol'tsman, G., Voronov, B., Yagoubov, P., Cherednichenko, S., Gershenzon, E., et al. (1997). Spiral antenna NbN hot-electron bolometer mixer at submm frequencies. IEEE Trans. Appl. Supercond., 7(2), 3395–3398.
Abstract: We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
|
|
