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Kroug, M., Cherednichenko, S., Merkel, H., Kollberg, E., Voronov, B., Gol'tsman, G., et al. (2001). NbN hot electron bolometric mixers for terahertz receivers. IEEE Trans. Appl. Supercond., 11(1), 962–965.
Abstract: Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
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Skalare, A., McGrath, W. R., Echternach, P. M., Leduc, H. G., Siddiqi, I., Verevkin, A., et al. (2001). Aluminum hot-electron bolometer mixers at submillimeter wavelengths. IEEE Trans. Appl. Supercond., 11(1), 641–644.
Abstract: Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.
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Hsiao, F. Z., Lin, M. C., Wang, C., Lee, D. S., Chen, J. R., Hilbert, B., et al. (2001). The liquid helium cryogenic system for the superconducting cavity in SRRC. In Proc. Particle Accelerator Conference (Vol. 2, pp. 1604–1606).
Abstract: A 500 MHz superconducting cavity will replace the current copper cavity and begin to operate in the beginning of the year 2003. A liquid helium cryogenic system provides the cavity at 4.5 K a cooling capacity of 255 W without LN2 pre-cooling and a liquefaction rate of 110 liter/hour with LN2 pre-cooling. A safety factor of 1.5 is used to estimate the heat load from the superconducting cavity and the heat loss from the transfer lines. With the LN2 pre-cooling, this cooling system provides a cooling capacity of up to 450 W to cool down the additional superconducting Landau cavity. The capacity of the system can be tuned using a frequency driver installed at the compressor station. The pressure fluctuations of the dewar and of the suction line are kept to the same stability requirement that of the cavity cryostat to minimize the influence in cavity operation. A shutdown period for maintenance of more than 8000 hours for the cryogenic system is expected without interfering with the continuous operation of the superconducting cavity.
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Kroug, M. (2001). Hot electron bolometric mixers for a quasi-optical terahertz receiver. Ph.D. thesis, , Chalmers University of Technology, Gothenburg, Sweden.
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Shitov, S. V., Levitchev, M., Veretennikov, A. V., Koshelets, V. P., Prokopenko, G. V., Filippenko, L. V., et al. (2001). Superconducting integrated receiver as 400-600 GHz tester for coolable devices. IEEE Trans. Appl. Supercond., 11(1), 832–835.
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Gershenson, M. E., Gong, D., Sato, T., Karasik, B. S., & Sergeev, A. V. (2001). Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures. Appl. Phys. Lett., 79, 2049–2051.
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Jackson, B. D., Baryshev, A. M., de Lange, G., Gao, J. R., Shitov, S. V., Iosad, N. N., et al. (2001). Low-noise 1 THz superconductor-insulator-superconductor mixer incorporating a NbTiN/SiO2/Al tuning circuit. Appl. Phys. Lett., 79(3), 436.
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Karpov, A., Miller, D., Rice, F., Zmuidzinas, J., Stern, J. A., Bumble, B., et al. (2001). Low noise 1.2 THz SIS receiver. In C. Iit.u.t.e of T. Jet Propulsion Laboratory (Ed.), Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 21–22). San Diego, CA, USA.
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Shi, S. C., Chin, C. C., Wang, M. J., Shan, W. L., Zhang, W., & Noguchi, T. (2001). Development of a 600–720 GHz SIS Mixer for the SMART. In C. Iit.u.t.e of T. Jet Propulsion Laboratory (Ed.), Proc. 12th Int. Symp. Space Terahertz Technol. (215). San Diego, CA, USA.
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Merkel, H. F., Khosropanah, P., Sigfrid Yngvesson, K., Cherednichenko, S., Kroug, M., Adam, A., et al. (2001). An active zone small signal model for hot-electron bolometric mixers. In Proc. 12th Int. Symp. Space Terahertz Technol. (55). San Diego, CA, USA.
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Betz, A. L., Boreiko, R. T., Sivananthan, S., & Ashokan, R. (2001). HgCdTe photoconductive mixers for 2-8 THz. In C. Iit.u.t.e of T. Jet Propulsion Laboratory (Ed.), Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 92–101). San Diego, CA, USA.
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Siemsen, K. J., Bernard, J. E., Madej, A. A., & Marmet, L. (2001). Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz. Appl. Phys. B: Lasers and Optics, 72, 567–573.
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Eliasson, B. J. (2001). Metal-insulator-metal diodes for solar energy conversion. Ph.D. thesis, , .
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Shelkovnikov, A., Grain, C., Nguyen, C. T., Butcher, R. J., Amy-Klein, A., & Chardonnet, C. (2001). 500-Hz two-photon Ramsey fringes with a SF6 beam: towards a new frequency standard in the 30-THz spectral region. Appl. Phys. B: Lasers and Optics, 73, 93–98.
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Murk, A., Kämpfer, N., Wylde, R., Inatani, J., Manabe, T., & Seta, M. (2001). Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 426–435).
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