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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. url  doi
openurl 
  Title Response of carbon nanotube film transistor to the THz radiation Type Conference Article
  Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.  
  Volume 195 Issue Pages 05012 (1 to 2)  
  Keywords field-effect transistor, FET, carbon nanotube, CNT  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1317  
Permanent link to this record
 

 
Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. url  doi
openurl 
  Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
  Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.  
  Volume 7 Issue 3 Pages 2000872  
  Keywords SWCNT transistors  
  Abstract The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2199-160X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1843  
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Author Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. url  doi
openurl 
  Title The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts Type Conference Article
  Year 2018 Publication Materials Today: Proc. Abbreviated Journal Materials Today: Proc.  
  Volume 5 Issue 13 Pages 27301-27306  
  Keywords graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor  
  Abstract We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2214-7853 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1316  
Permanent link to this record
 

 
Author Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. url  doi
openurl 
  Title Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors Type Journal Article
  Year 2015 Publication Carbon Abbreviated Journal Carbon  
  Volume 87 Issue Pages 330-337  
  Keywords carbon nanotubes, CNT detectors, field effect transistors, FET  
  Abstract Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0008-6223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1778  
Permanent link to this record
 

 
Author Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. url  doi
openurl 
  Title Terahertz imaging system based on superconducting heterodyne integrated receiver Type Conference Article
  Year 2014 Publication Proc. THz and Security Applications Abbreviated Journal Proc. THz and Security Applications  
  Volume Issue Pages 113-125  
  Keywords SIS mixer, SIR, THz imaging  
  Abstract The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.

In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K.
 
  Address  
  Corporate Author Thesis  
  Publisher Springer Netherlands Place of Publication Dordrecht Editor Corsi, C.; Sizov, F.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 978-94-017-8828-1 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1368  
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