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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Integrated contra-directional coupler for NV-centers photon filtering Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 354-360  
  Keywords NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings  
  Abstract We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1839  
Permanent link to this record
 

 
Author Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Silicon nitride focusing grating coupler for input and output light of NV-centers Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 349-353  
  Keywords NV-centers, focusing grating coupler  
  Abstract Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1841  
Permanent link to this record
 

 
Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory doi  isbn
openurl 
  Title Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds Type Conference Article
  Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS  
  Volume Issue Pages 344-348  
  Keywords  
  Abstract The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.  
  Address NV-centers, nanodiamonds  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium  
  Area Expedition Conference 32nd European Modeling & Simulation Symposium  
  Notes Approved no  
  Call Number Serial 1840  
Permanent link to this record
 

 
Author Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. doi  openurl
  Title Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver Type Conference Article
  Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 27 Issue 4 Pages 6  
  Keywords Multi-pixel, HEB, silicon-on-insulator, horn array  
  Abstract We report on the development of a multi-pixel

Hot Electron Bolometer (HEB) receiver fabricated using

silicon membrane technology. The receiver comprises a

2 × 2 array of four HEB mixers, fabricated on a single

chip. The HEB mixer chip is based on a superconducting

NbN thin film deposited on top of the silicon-on-insulator

(SOI) substrate. The thicknesses of the device layer and

handling layer of the SOI substrate are 20 μm and 300 μm

respectively. The thickness of the device layer is chosen

such that it corresponds to a quarter-wave in silicon at

1.35 THz. The HEB mixer is integrated with a bow-tie

antenna structure, in turn designed for coupling to a

circular waveguide,
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1111  
Permanent link to this record
 

 
Author Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory doi  openurl
  Title Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption Type Conference Article
  Year 2017 Publication IEEE Transactions on Applied Superconductivity Abbreviated Journal IEEE Transactions on Applied Superconductiv  
  Volume 27 Issue 4 Pages 5  
  Keywords Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors  
  Abstract In superconducting single-photon detectors SSPD

the efficiency of local suppression of superconductivity and hotspot

formation is controlled by diffusivity and electron-phonon

interaction time. Here we selected a material, 3.6-nm-thick MoNx

film, which features diffusivity close to those of NbN traditionally

used for SSPD fabrication, but with electron-phonon interaction

time an order of magnitude larger. In MoNx detectors we study

the dependence of detection efficiency on bias current, photon

energy, and strip width and compare it with NbN SSPD. We

observe non-linear current-energy dependence in MoNx SSPD

and more pronounced plateaus in dependences of detection

efficiency on bias current which we attribute to longer electronphonon

interaction time.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1114  
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