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Author Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. url  doi
openurl 
  Title Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] Type Journal Article
  Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 96 Issue 8 Pages 089901  
  Keywords SSPD, SNSPD, erratum  
  Abstract A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1395  
Permanent link to this record
 
 
Author Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. url  doi
openurl 
  Title Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm Type Journal Article
  Year 2010 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 97 Issue 13 Pages 131907 (1 to 3)  
  Keywords SSPD, SNSPD, InAsP/InP quantum dots  
  Abstract By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1238  
Permanent link to this record
 
 
Author Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation Type Journal Article
  Year 1992 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 72 Issue 11 Pages 5496-5499  
  Keywords YBCO HTS detectors  
  Abstract We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1668  
Permanent link to this record
 
 
Author Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films Type Journal Article
  Year 1994 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 76 Issue 3 Pages 1902-1909  
  Keywords YBCO HTS HEB detector, nonequilibrium response  
  Abstract Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1637  
Permanent link to this record
 
 
Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse Type Journal Article
  Year 1995 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 77 Issue 8 Pages 4064-4070  
  Keywords YBCO HTS switches  
  Abstract A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1623  
Permanent link to this record
 
 
Author Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Egorov, A. Y.; Knyazev, D. A.; Andrianov, A. V.; Zakhar’in, A. O.; Konnikov, S. G.; Gol’tsman, G. N. url  doi
openurl 
  Title A weakly coupled semiconductor superlattice as a potential for a radio frequency modulated terahertz light emitter Type Journal Article
  Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 100 Issue 13 Pages 131104 (1 to 4)  
  Keywords semiconductor superlattice  
  Abstract The bolometer response to THz radiation from a weakly coupled GaAs/AlGaAs superlattice biased in the self-oscillations regime has been observed. The bolometer signal is modulated with the frequency equal to the fundamental frequency of superlattice self-oscillations. The frequency spectrum of the bolometer signal contains higher harmonics whose frequency is a multiple of fundamental frequency of self-oscillations.

This work was supported by State Contracts Nos. 16.740.11.0044 and 16.552.11.7002 of Ministry of Education and Science of the Russian Federation. Structural characterization was made on the equipment of the Joint Research Centre «Material science and characterization in advanced technology» (Ioffe Institute, St. Petersburg, Russia).		  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1379  
Permanent link to this record
 
 
Author Semenov, A. D.; Gol’tsman, G. N. url  doi
openurl 
  Title Nonthermal mixing mechanism in a diffusion-cooled hot-electron detector Type Journal Article
  Year 2000 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 87 Issue 1 Pages 502-510  
  Keywords NbN HEB mixers, nonthermal  
  Abstract We present an analysis of a diffusion-cooled hot-electron detector fabricated from clean superconducting material with low transition temperature. The distinctive feature of a clean material, i.e., material with large electron mean free path, is a relatively weak inelastic electron scattering that is not sufficient for the establishment of an elevated thermodynamic electron temperature when the detector is subjected to irradiation. We propose an athermal model of a diffusion-cooled detector that relies on suppression of the superconducting energy gap by the actual dynamic distribution of excess quasiparticles. The resistive state of the device is caused by the electric field penetrating into the superconducting bridge from metal contacts. The dependence of the penetration length on the energy gap delivers the detection mechanism. The sources of the electric noise are equilibrium fluctuations of the number of thermal quasiparticles and frequency dependent shot noise. Using material parameters typical for A1, we evaluate performance of the device in the heterodyne regime at terahertz frequencies. Estimates show that the mixer may have a noise temperature of a few quantum limits and a bandwidth of a few tens of GHz, while the required local oscillator power is in the μW range due to ineffective suppression of the energy gap by quasiparticles with high energies.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1558  
Permanent link to this record
 
 
Author Ozhegov, R. V.; Gorshkov, K. N.; Smirnov, K. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. url  openurl
  Title Terahertz imaging system based on superconducting integrated receiver Type Conference Article
  Year 2010 Publication Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications Abbreviated Journal Proc. 2-nd Int. Conf. Terahertz and Microwave radiation: Generation, Detection and Applications  
  Volume Issue Pages 20-22  
  Keywords SIS mixer, SIR  
  Abstract The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Developing an array of SIRs would allow obtaining amplitude and phase characteristics of incident radiation in the plane of the receiver. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compare to traditional systems: i) high temperature resolution, comparable to the best results for incoherent receivers; ii) high spectral resolution allowing spectral analysis of various substances; iii) the local oscillator frequency can be varied to obtain images at different frequencies, effectively providing “color” images; iv) since a heterodyne receiver preserves the phase of the radiation, it is possible to construct 3D images. The paper presents a prototype THz imaging system using an 1 pixel SIR. We have studied the dependence of the noise equivalent temperature difference (NETD) on the integration time and also possible ways of achieving best possible sensitivity. An NETD of 13 mK was obtained with an integration time of 1 sec a detection bandwidth of 4 GHz at a local oscillator frequency of 520 GHz. An important advantage of an FFO is its wide operation range: 300-700 GHz.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number ozhegov2010terahertz Serial 1397  
Permanent link to this record
 
 
Author Tikhonov, V. V.; Polyakova, O. N.; Gol’tsman, G. N.; Dzardanov, A. L.; Boyarskiy, D. A. url  doi
openurl 
  Title Determination of dielectric properties of ore minerals in the microwave band Type Journal Article
  Year 2008 Publication Radiophys. Quant. Electron. Abbreviated Journal Radiophys. Quant. Electron.  
  Volume 51 Issue 12 Pages 966-974  
  Keywords ore complex permittivity, chalcopyrite, magnetite, sphalerite, labradorite  
  Abstract We consider a method for determining the complex dielectric permittivity of ore and nonmetal minerals in the microwave band of electromagnetic radiation. The results of measuring the reflectivity and transmittivity of chalcopyrite, magnetite, sphalerite, and labradorite samples in the frequency range 77–300 GHz are presented. A method for calculation of the complex dielectric permittivity of minerals on the basis of the obtained experimental data is proposed. The approximation formulas for calculation of the complex dielectric permittivity of the studied minerals are given.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0033-8443 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1404  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
  Year 1999 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 33 Issue 5 Pages 551-554  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1571  
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