| Records |
| Author |
Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
| Title |
Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
| Volume |
9 |
Issue |
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Pages |
154-159 |
| Keywords |
NbN HEB mixers |
| Abstract |
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| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
International Institute of Informatics and Systemics |
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Serial |
547 |
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| Author |
Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N. |
| Title |
Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
| Volume |
9 |
Issue |
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Pages |
148-153 |
| Keywords |
NbN HEB mixers |
| Abstract |
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| Address |
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Thesis |
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| Publisher |
International Institute of Informatics and Systemics |
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ISBN |
9806560639, 9789806560635 |
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Conference |
9th World Multi-Conference on Systemics, Cybernetics and Informatics |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1480 |
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| Author |
Hübers, Heinz-Wilhelm; Semenov, Alexei; Schubert, Josef; Gol'tsman, Gregory; Voronov, Boris; Gershenzon, Evgeni |
| Title |
Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz |
Type |
Conference Article |
| Year |
2000 |
Publication |
Proc. 8-th Int. Conf. on Terahertz Electronics |
Abbreviated Journal |
Proc. 8-th Int. Conf. on Terahertz Electronics |
| Volume |
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Issue |
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Pages |
117-119 |
| Keywords |
NbN HEB mixers |
| Abstract |
We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens. |
| Address |
Darmstadt, Germany |
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International Conference on Terahertz Electronics [8th], Held inDarmstadt, Germany on 28-29 September 2000 |
| Notes |
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no |
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Serial |
1553 |
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| Author |
Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
| Title |
Optical coupling and conversion gain for NbN HEB mixer at THz frequencies |
Type |
Conference Article |
| Year |
1997 |
Publication |
Proc. 4-th Int. Semicond. Device Research Symp. |
Abbreviated Journal |
Proc. 4-th Int. Semicond. Device Research Symp. |
| Volume |
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Issue |
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Pages |
47-50 |
| Keywords |
NbN HEB mixers |
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| Address |
Charlottesville, Virginia |
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Approved |
no |
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Serial |
1601 |
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| Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
| Title |
Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
Type |
Journal Article |
| Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
19 |
Pages |
2814-2816 |
| Keywords |
NbN HEB mixers, noise temperature, local oscillator power |
| Abstract |
In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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no |
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Serial |
911 |
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