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Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. Noise equivalent temperature difference of a superconducting integrated terahertz receiver 2009 J. Commun. Technol. Electron. 54 716-720 details   doi
Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer 2010 Tech. Phys. Lett. 36 1103-1105 details   doi
Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. Superconducting hot-electron bolometer mixer as element of thermal imager matrix 2010 Tech. Phys. Lett. 36 1006-1008 details   doi
Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. Dielectric characteristics of ore minerals in a 10–40 GHz frequency range 2008 Tech. Phys. Lett. 34 967-970 details   doi
Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers 2012 Tech. Phys. 57 971-974 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons 2010 Semicond. 44 1427-1429 details   doi
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. Generation of nanosecond terahertz pulses by the optical rectification method 2012 JETP Lett. 96 94-97 details   doi
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409 details   doi
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479 details   doi
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